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NXP Semiconductors N.V.
Part No. BYV29X-600 BYV29X-600-15
OCR Text ... square waveform; d = 1.0; t h 100 c - 600 v i f(av) average forward current square waveform; d = 0.5; t h 85 c- 9 a i frm repetitive peak forward current t = 25 m s; square waveform; d = 0.5; t h 85 c -18a i fsm non-repetitive peak f...
Description Rectifier diode ultrafast
Ultrafast power diode BYV29X-600<SOD113 (SOD113)|<<http://www.nxp.com/packages/SOD113.html<1<week 32, 2004,;

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    BYC20X-600 BYC20X-600-15

NXP Semiconductors
Part No. BYC20X-600 BYC20X-600-15
OCR Text ...re square waveform; = 1.0; Th 100 C square waveform; = 0.5; Th 25 C square waveform; = 0.5; Th 25 C; tp = 25 s t = 10 ms; sinusoidal w...600 600 500 20 40 250 274 +150 150 Unit V V V A A A A C C BYC20X-600_1 (c) NXP B.V. 2007. All ...
Description Hyperfast power diode
Rectifier diode, hyperfast

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    HTS138-600

SemiHow Co.,Ltd.
Part No. HTS138-600
OCR Text ... Temperature V alue 600 12.0 100/110 10 2.0 5.0 1500 -40 to +125 -40 to +125 U nits V A A V A W V SEMIHOW REV.1.0 Jan 2006 HTS138-600 Electrical Characteristics Symbol IGT VGT V GD (dv/dt)c Parameter Gate Trigger Current ...
Description INSULATION TYPE TRIAC (TO-220F)

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Part No. BYV27-600
OCR Text ...board with spacing 25 mm r thja 100 k/w byv27-600 vishay semiconductors ultra fast avalanche sinterglass diode www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86041...
Description Ultra Fast Avalanche Sinterglass Diode

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    HTX6-600

SemiHow Co.,Ltd.
Part No. HTX6-600
OCR Text ...te Current (A) 101 101 100 100 10-1 101 102 103 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current (mA) On-stat...600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig8. Transient Thermal Impeda...
Description 600V 6A TRIAC

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    BT236X-600 BT236X-600F BT236X-600G BT236X-800 BT236X-800G BT236X-600F127

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NXP Semiconductors
Part No. BT236X-600 BT236X-600F BT236X-600G BT236X-800 BT236X-800G BT236X-600F127
OCR Text ...a) 003aab310 0 2 4 6 8 -50 0 50 100 150 t h ( c) i t(rms) (a) 88 c bt236x_ser_f_g_2 ? koninklijke philips electronics n.v. 2006. all r...600 bt236x-800 bt236x-600f bt236x-600g bt236x-800g unit min typ max min typ max min typ max i gt gat...
Description 6 A Four-quadrant triacs
6 A Four-quadrant triacs - I<sub>GT</sub>: 25 mA; I<sub>T</sub> (R<sub>MS</sub>): 6 A; V<sub>DRM</sub>: 600 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack
   6 A Four-quadrant triacs

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    BYV29FX-600

NXP Semiconductors
Part No. BYV29FX-600
OCR Text ...2 IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 C; see Figure 5 IF = 9 A; Tj = 150 C; see Figure 4 Typ Max 600 9 Unit V A repetitive peak reverse voltage average forward current Symbol Parameter Dynamic characteristics trr reverse recov...
Description Enhanced ultrafast rectifier diode

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    HTP20-600

SemiHow Co.,Ltd.
Part No. HTP20-600
OCR Text ...) 102 Gate Voltage (V) 100 101 10-1 101 102 103 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current (mA) ...600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig8. Transient Thermal Impeda...
Description 600V 20A TRIACThe

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    BLA6H1011-600

NXP Semiconductors N.V.
Part No. BLA6H1011-600
OCR Text ... 25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 1030 to 1090 VDS (V) 48 PL (W) 600 Gp (dB) 17 D (%) 52 tr (ns) 11 tf (ns) 5 CAUTION This device is sensitive to ElectroSta...
Description LDMOS avionics power transistor BLA6H1011-600<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

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    SEMIWELL[SemiWell Semiconductor]
Part No. BT139-600 BT139F-600
OCR Text ...= 60 = 90 o o o o 105 100 95 0 360 5 : Conduction Angle = 120 o = 150 o = 180 12 16 20 0 0 2 4 6 8 10 12 14 16...600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 1 Fig 8. Transient Thermal Imp...
Description Bi-Directional Triode Thyristor

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