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  4banks Datasheet PDF File

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    K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC75

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
Part No. K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC75
OCR Text ...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Operating current (Burst mode) Refresh current Self refresh current ICC4 115 mA 1 ICC5 ICC6 135 1 400 mA mA uA 2 3 4 Not...
Description Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC

File Size 116.51K  /  11 Page

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    M368L3223CTL M368L3223CTL-LB3 M368L3223CTL-CA2 M368L3223CTL-CB0 M368L3223CTL-CB3 M368L3223CTL-LA2 M368L3223CTL-LB0

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M368L3223CTL M368L3223CTL-LB3 M368L3223CTL-CA2 M368L3223CTL-CB0 M368L3223CTL-CB3 M368L3223CTL-LA2 M368L3223CTL-LB0
OCR Text ... of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR S...
Description 256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity

File Size 81.71K  /  12 Page

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    K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S511632D-KC_L7C K4S511632D-KC_L75 K4S511632D-KC_L1L K4S511632D-KC/L1H K4S51

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S511632D-KC_L7C K4S511632D-KC_L75 K4S511632D-KC_L1L K4S511632D-KC/L1H K4S511632D-KC/L1L K4S511632D-KC/L75 K4S511632D-KC/L7C K4S511632D-KC1H
OCR Text ...are stable IO = 0 mA Page burst 4banks activated. tCCD = 2CLKs tR C tRC(min) CKE 0.2V C L 200 CMOS SDRAM Version -75 180 -1H 180 -1L 180 Unit Note mA 1 ICC2P ICC2PS ICC2N 4 4 40 mA Precharge standby current i...
Description 32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL

File Size 44.56K  /  9 Page

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    samsung
Part No. K4S561632E
OCR Text ...are stable IO = 0 mA Page burst 4banks Activated. tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L Test Condition CMOS SDRAM Version -75 80 2 2 20 Unit Note ICC1 ICC2P mA 1 ICC2PS CKE & CLK VIL(max), tCC = ICC2N ICC2NS ICC...
Description IC,SDRAM,4X4MX16,CMOS,TSSOP,54PIN,PLASTIC

File Size 119.02K  /  14 Page

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    NT128D64S88A0G NT128D64S88A0G-8B NT128D64S88A0G-75B NT128D64S88A0G-7K

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. NT128D64S88A0G NT128D64S88A0G-8B NT128D64S88A0G-75B NT128D64S88A0G-7K
OCR Text ...Mx64 SDRAM DIMM based on 16Mx8, 4banks, 4K Refresh, 2.5V DDR SDRAMs with SPD Byte Description Number of Serial PD Bytes Written during Production Total Number of Bytes in Serial PD device Fundamental Memory Type Number of Row Addresses on ...
Description 184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块

File Size 191.28K  /  15 Page

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    SAMSUNG
Part No. K4S283232E K4S283232E-TC1L K4S283232E-TC60
OCR Text ...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V C L 800 mA Operating Current (Burst Mode) Refresh Current Self Refresh Current ICC4 120 95 90 mA 1 ICC5 ICC6 200 180 2 80...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4Mx32 SDRAM

File Size 101.55K  /  11 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S563233F K4S563233FHN K4S563233FHN75
OCR Text ...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) -E/C -N/L Active Standby Current in non power-down mode (One Bank Active) ICC3NS 20 mA Operating Current (Burst Mode) ICC4 120 100 90 ...
Description 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

File Size 138.59K  /  12 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56323LF K4S56323LF-S K4S56323LF-R1L K4S56323LF-N K4S56323LF-L K4S56323LF-FE K4S56323LF-C K4S56323LF-FR750
OCR Text ...are stable IO = 0 mA Page burst 4banks Activated tCCD = 2CLKs tRC tRC(min) -E/C -N/L Active Standby Current in non power-down mode (One Bank Active) ICC3NS 20 mA Operating Current (Burst Mode) ICC4 120 100 90 ...
Description 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

File Size 138.71K  /  12 Page

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    KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH
OCR Text 4banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S1623CTY is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CTY consists of sixteen CMOS 8M x 8 bit with 4b...
Description PC100 SDRAM MODULE

File Size 170.55K  /  12 Page

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    KMM366S1623DTL KMM366S1623DTL-GO KMM366S1623DTL-G0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM366S1623DTL KMM366S1623DTL-GO KMM366S1623DTL-G0
OCR Text ...6Mx64 SDRAM DIMM based on 8Mx8, 4banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S1623DTL is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623DTL consists of...
Description PC66 Unbuffered DIMM

File Size 139.93K  /  10 Page

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For 4banks Found Datasheets File :: 1003    Search Time::1.469ms    
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