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    IRLL014N IRLL014NTR

IRF[International Rectifier]
Part No. IRLL014N IRLL014NTR
OCR Text ...SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings Par...
Description Advanced Process Technology
HEXFET Power MOSFET

File Size 154.63K  /  9 Page

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    M30218 M30218FA M30218FC M30218FCFP M30218MA M30218MC M30218MCA-207FP

Mitsubishi Electric Semiconductor
Part No. M30218 M30218FA M30218FC M30218FCFP M30218MA M30218MC M30218MCA-207FP
OCR Text ...ned to help designers take full advantage of the M16C functions. For details about the software, please refer to the "M16C/60, M16C/20 series software manual", and for the development support tools, please refer to the related instruction m...
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

File Size 4,916.26K  /  467 Page

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    M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 M5M4V16169DRT-8 M5M4V16169DTP M5M4V16169RT-15 M5M4V16169RT-10 M5M4V161

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 M5M4V16169DRT-8 M5M4V16169DTP M5M4V16169RT-15 M5M4V16169RT-10 M5M4V16169RT-8 M5M4V16169RT-7 M5M4V16169DTP-15 M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8
OCR Text ...nstruction cycle, a fundamental advantage over a conventional DRAM/SRAM cache. The RAM is fabricated with a high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low cost ...
Description 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

File Size 733.86K  /  64 Page

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    MAX1736 MAX1736EUT41-T MAX1736EUT42-T

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX1736 MAX1736EUT41-T MAX1736EUT42-T
OCR Text ...e constant of the cell. The key advantage of this method is that the charge circuit is small and generates minimal heat while providing a safe method of charging to ensure maximum cell life. Figure 1 shows the MAX1736 functional diagram. ...
Description SOT23 / Single-Cell Li Battery Charger for Current-Limited Supply
SOT23, Single-Cell Li Battery Charger for Current-Limited Supply

File Size 176.58K  /  8 Page

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    MC10E411 MC10E411FN ON0650

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC10E411 MC10E411FN ON0650
OCR Text ....0V systems. Designers can take advantage of the E411's performance to distribute low skew clocks across the backplane or the board. In a PECL environment, series or Thevenin line terminations are typically used as they require no additiona...
Description From old datasheet system
1:9 DIFFERENTIAL ECL/PECL RAMBUS CLOCK BUFFER

File Size 128.04K  /  6 Page

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    MC10E445 MC10E445FN MC100E445 MC100E445FN ON0653

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC10E445 MC10E445FN MC100E445 MC100E445FN ON0653
OCR Text ...elative to the first is to take advantage of the differential clock inputs of the E445. By connecting the clock for the second E445 to the complimentary clock input pin the device will clock a half a clock period after the first E445 (Figur...
Description From old datasheet system
4-BIT SERIAL/ PARALLEL CONVERTER

File Size 98.59K  /  8 Page

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    MC10H124 MC10H124FN MC10H124L MC10H124P ON0750

ON Semiconductor
Motorola, Inc
Part No. MC10H124 MC10H124FN MC10H124L MC10H124P ON0750
OCR Text ... to a MECL high-logic state. An advantage of this device is that TTL-level information can be transmitted differentially, via balanced twisted pair lines, to MECL equipment, where the signal can be received by the MC10H115 or MC10H116 diffe...
Description Quad TTL-to-MECL Translator With TTL Strobe Input
From old datasheet system

File Size 100.34K  /  4 Page

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