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Kersemi Electronic Co., Ltd.
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| Part No. |
VS-MBR15
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| OCR Text |
...phase, 60 hz 150 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 2 a, l = 3.5 mh 7 mj repetitive avalanche current per leg i ar current decaying linear ly to zero in 1 s frequency li mited by t j maximum v a = 1.5 x v r... |
| Description |
Low forward voltage drop
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| File Size |
1,952.23K /
5 Page |
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Vishay Semiconductors
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| Part No. |
SF4001
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| OCR Text |
avalanche sinterglass diode sf4001, sf4002, sf4003, sf 4004, sf4005, sf 4006, sf4007 vishay semiconductors document number: 86060 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.8... |
| Description |
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
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| File Size |
118.22K /
5 Page |
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International Rectifier, Corp.
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| Part No. |
JANSH2N7269U
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| OCR Text |
... voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 26 a e ar repetitive avalanche energy ? 15 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction -55 to 150 t stg storage temperature rang... |
| Description |
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 200000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET 1封装
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| File Size |
278.93K /
12 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
JANSH2N7269U
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| OCR Text |
...al test conditions n repetitive avalanche rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n electrically isolated n ceramic eyelets absolute maximum ratings ? parameter units i d @ v... |
| Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
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| File Size |
276.10K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW8NB100
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| OCR Text |
...MELY HIGH dv/dt CAPABILITY 100% avalanche TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 30V GATE TO SOURCE VOLTAGE RATING
3 2 1
TO-247
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectron... |
| Description |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
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| File Size |
253.36K /
9 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STW8NB100
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| OCR Text |
...E TO SOURCE VOLTAGE RATING 100% avalanche TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247
3 2 1
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ... |
| Description |
N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
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| File Size |
55.84K /
6 Page |
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Ruichips Semiconductor Co., Ltd
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| Part No. |
RU3560L
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| OCR Text |
...n to case 3 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 1 0 0 m j ? 4 0 v/ 50 a, r ds ( on ) = 13 m ( tpy.)@ v gs =10v r ds ( on ) = 18 m ( tpy.)@ v gs = 4.5 v ? super high dense cell design ? reliable... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
325.77K /
9 Page |
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it Online |
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