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  igbt mosfet Datasheet PDF File

For igbt mosfet Found Datasheets File :: 2096    Search Time::2.812ms    
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    HGTG30N60B3

Fairchild Semiconductor
Part No. HGTG30N60B3
OCR Text igbt The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of mosfets and bipolar transistors. This device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transi...
Description 60A, 600V, UFS Series N-Channel igbt

File Size 181.39K  /  8 Page

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    HGTG30N60C3D FN4041

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTG30N60C3D FN4041
OCR Text igbt with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFE...mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage...
Description 63A, 600V, UFS Series N-Channel igbt with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL igbt, TO-247
From old datasheet system

File Size 115.87K  /  7 Page

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    HGTG30N60C3 FN4042

INTERSIL[Intersil Corporation]
Part No. HGTG30N60C3 FN4042
OCR Text igbt The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of mosfets and bipolar transistors. The device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transis...
Description From old datasheet system
63A, 600V, UFS Series N-Channel igbt

File Size 98.55K  /  6 Page

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    HGTG40N60A4 HGTG40N60A4NL

Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG40N60A4 HGTG40N60A4NL
OCR Text igbt The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a mosfet and a bipolar transistor. This device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar tran...
Description 600V, SMPS Series N-Channel igbt 75 A, 600 V, N-CHANNEL igbt, TO-247

File Size 134.28K  /  8 Page

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    HGTG40N60B3

Fairchild Semiconductor
Part No. HGTG40N60B3
OCR Text igbt Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of mosfets and bipolar transistors. The device has the high input impedance of a mosfet and the low on-state conduction loss of a bi...
Description 70A, 600V, UFS Series N-Channel igbt

File Size 90.08K  /  8 Page

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    HGTG40N60C3 FN4472

INTERSIL[Intersil Corporation]
Part No. HGTG40N60C3 FN4472
OCR Text igbt The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a mosfet and a bipolar transistor. These devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar t...
Description 75A/ 600V/ UFS Series N-Channel igbt
75A, 600V, UFS Series N-Channel igbt
From old datasheet system

File Size 78.15K  /  7 Page

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    L6384 L6384D

STMICROELECTRONICS[STMicroelectronics]
Part No. L6384 L6384D
OCR Text ...to drive N Channel Power MOS or igbt. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMO...mosfet normally used to hold the pin low; the gate driver ensures low impedance also in SD condition...
Description HIGH-VOLTAGE HALF BRIDGE DRIVER

File Size 77.03K  /  10 Page

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    IR2105 IR2105S

IRF[International Rectifier]
Part No. IR2105 IR2105S
OCR Text ...ge, high speed power mosfet and igbt driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with stand...
Description Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-lead SOIC package
Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-pin DIP package
High Voltage, High Speed Power mosfet and igbt Driver

File Size 133.63K  /  12 Page

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    IRFPS3810

IRF[International Rectifier]
Part No. IRFPS3810
OCR Text ...2 - DRAIN 3 - S OURCE 4 - DRAIN igbt 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification St...
Description Power mosfet(Vdss=100V, Rds(on)=0.009ohm, Id=170A?
Power mosfet(Vdss=100V, Rds(on)=0.009ohm, Id=170A)
Power mosfet(Vdss=100V Rds(on)=0.009ohm Id=170A)
Power mosfet(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)

File Size 122.48K  /  8 Page

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    IXBD4410 IXBD4410P IXBD4410PI IXBD4410SI IXBD4411 IXBD4411PI IXBD4411SI

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXBD4410 IXBD4410P IXBD4410PI IXBD4410SI IXBD4411 IXBD4411PI IXBD4411SI
OCR Text ...uration shutdown to protect the igbt or Power mosfet devices from damage. The chipset provides the necessary gate drive signals to fully control the grounded-source low-side power device as well as the floating-source high-side power device...
Description Power Intergrated ICs
MICA RoHS Compliant: No ISOSMART半桥驱动器芯片组
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset
   ISOSMART Half Bridge Driver Chipset

File Size 701.18K  /  11 Page

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For igbt mosfet Found Datasheets File :: 2096    Search Time::2.812ms    
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