igbt
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of mosfets and bipolar transistors. This device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transi...
igbt with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFE...mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage...
Description
63A, 600V, UFS Series N-Channel igbt with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL igbt, TO-247 From old datasheet system
igbt
The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of mosfets and bipolar transistors. The device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transis...
Description
From old datasheet system 63A, 600V, UFS Series N-Channel igbt
igbt
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a mosfet and a bipolar transistor. This device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar tran...
Description
600V, SMPS Series N-Channel igbt 75 A, 600 V, N-CHANNEL igbt, TO-247
igbt
Description
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of mosfets and bipolar transistors. The device has the high input impedance of a mosfet and the low on-state conduction loss of a bi...
igbt
The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a mosfet and a bipolar transistor. These devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar t...
Description
75A/ 600V/ UFS Series N-Channel igbt 75A, 600V, UFS Series N-Channel igbt From old datasheet system
...to drive N Channel Power MOS or igbt. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMO...mosfet normally used to hold the pin low; the gate driver ensures low impedance also in SD condition...
...ge, high speed power mosfet and igbt driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with stand...
Description
Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-lead SOIC package Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-pin DIP package High Voltage, High Speed Power mosfet and igbt Driver
...2 - DRAIN 3 - S OURCE 4 - DRAIN igbt 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification St...
Description
Power mosfet(Vdss=100V, Rds(on)=0.009ohm, Id=170A? Power mosfet(Vdss=100V, Rds(on)=0.009ohm, Id=170A) Power mosfet(Vdss=100V Rds(on)=0.009ohm Id=170A) Power mosfet(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)
...uration shutdown to protect the igbt or Power mosfet devices from damage. The chipset provides the necessary gate drive signals to fully control the grounded-source low-side power device as well as the floating-source high-side power device...