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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5P21045NR1
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| OCR Text |
...DF. Power Gain Drain Efficiency intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps D IM3 ACPR IRL 13.5 23.5 -- -- -- 14.5 25.5 - 37 - 39 - 12 16.5 -- - 35 - 37 -8 dB % dBc dBc dB
1. Measurement made with device... |
| Description |
RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
411.71K /
11 Page |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MRF5P21240R6 MRF5P21240
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| OCR Text |
...z, f2 = 2167.5 MHz) Third Order intermodulation Distortion (VDD = 28 Vdc, Pout = 52 W Avg., IDQ = 2 x 1100 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz)... |
| Description |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
770.91K /
8 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S19060MR1 MRF5S19060MBR1
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| OCR Text |
...DF. Power Gain Drain Efficiency intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 12.5 21 -- -- -- 14 23 - 37 - 51 - 12 16 -- - 35 - 48 -9 dB... |
| Description |
RF Power Field Effect Transistors
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| File Size |
486.13K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S19090HSR3 MRF5S19090HR3
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| OCR Text |
...DF. Power Gain Drain Efficiency intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 13.5 24 -- -- -- 14.5 25.8 - 37 - 51 - 14.5 -- -- - 35 - 48... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
413.60K /
12 Page |
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it Online |
Download Datasheet |
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FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19090LSR3 MRF5S19090LR3
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| OCR Text |
... MHz, f2 =1990 MHz) Third Order intermodulation Distortion (VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth at f1 - 2.5 MHz and f2 = +2.... |
| Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
409.09K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3
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| OCR Text |
...DF. Power Gain Drain Efficiency intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss (1) Part is internally matched both on input and output. Gps D IM3 ACPR IRL 12.5 24 -- -- -- 13.9 25.5 - 36.5 - 50.7 - 13 -- -- - 35 -... |
| Description |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
723.32K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21045NR1
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| OCR Text |
...DF. Power Gain Drain Efficiency intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 13.5 24 -- -- -- 14.5 25.5 - 37 - 39 - 12 16.5 -- - 35 - 37... |
| Description |
RF Power Field Effect Transistors
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| File Size |
551.60K /
16 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF141
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| OCR Text |
...DQ = 250 mA, ID (Max) = 5.95 A) intermodulation Distortion (1) (VDD = 28 V, Pout = 150 W (PEP), f = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD = 28 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Ph... |
| Description |
N-CHANNEL BROADBAND RF POWER MOSFET
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| File Size |
159.11K /
8 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF148
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| OCR Text |
...50 V, f = 30 MHz, IDQ = 100 mA) intermodulation Distortion (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz, IDQ = 100 mA) Load Mismatch (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) (30 ... |
| Description |
N-CHANNEL MOS LINEAR RF POWER FET
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| File Size |
145.04K /
6 Page |
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it Online |
Download Datasheet |
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