| |
|
 |
IRF[International Rectifier]
|
| Part No. |
IRHM8230 IRHM7230
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the use... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
|
| File Size |
295.92K /
12 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHM9064
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demon... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)
|
| File Size |
101.13K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHM9160
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel RAD HARD HEXFETs has ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)
|
| File Size |
87.31K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHN7C50SE IRHN2C50SE
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
|
| File Size |
80.62K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHN8130 IRHN7130
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated vi... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
|
| File Size |
444.31K /
14 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| Part No. |
IRHN8230 IRHN7230
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated vi... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0
|
| File Size |
450.04K /
14 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHN9130
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel RAD HARD HEXFETs has ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)
|
| File Size |
88.01K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHN9150
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier's P-channel RAD HARD HEXFETs has d... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)
|
| File Size |
81.76K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHNA7264SE
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
|
| File Size |
98.87K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRHNA7360SE
|
| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
|
| File Size |
105.14K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
