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Alliance Semiconductor
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Part No. |
AS4C4M16S-6TIN
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OCR Text |
...e cas# and we# signals and is latched at the positive edges of clk. when ras# and cs# are asserted "low" and cas# is asserted "high," either the bankactivate command or t he precharge command is selected by the we# signal... |
Description |
64Mb / 4M x 16 bit Synchronous DRAM
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File Size |
3,342.14K /
53 Page |
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it Online |
Download Datasheet |
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Samsung
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Part No. |
K9LAG08U1A K9G8G08U0A
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OCR Text |
...when active high, commands are latched into the command register through the i/o ports on the rising edge of the we signal. ale address latch enable the ale input controls the activating path for addres s to the internal address registers... |
Description |
FLASH MEMORY
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File Size |
1,046.56K /
45 Page |
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it Online |
Download Datasheet |
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Price and Availability
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