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  pt-100 Datasheet PDF File

For pt-100 Found Datasheets File :: 13153    Search Time::2.891ms    
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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...C) VGSS (DC) ID (DC) ID (pulse) PT PT Tch Tstg -60 - +20 -20, 0 - +20 - +80 35 2.0 150 -55 to +150 V V V A A W W C C 1.30.2 1.50.2 2.54 ...100 A/Ps TEST CONDITIONS VGS = -10 V, ID = -10 A VGS = -4 V, ID = -10 A VDS = -10 V, ID = -1 mA VDS ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...S(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg -60 m20 -20, 0 m30 m120 35 2.0 150 -55 to +150 V V V A A W W C C 123 0.7 0.1 2.54 13.5 M...100 A/s 4120 1750 580 40 220 600 380 140 12 46 0.8 160 400 1.5 -1.0 12 MIN. TYP. 24 38 -1.5 24 -10 m...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ559 2SJ559-T1

NEC[NEC]
Part No. 2SJ559 2SJ559-T1
OCR Text ...2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -30 V V A A mW C C EQUIVALENT CIRCUIT Drain # 20 # 0.1 # 0.4 200 150 -55 to +150 ...100 -100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE dT - Derating Factor - % ID - Drain Current...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 48.29K  /  8 Page

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    2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2

NEC, Corp.
NEC[NEC]
Part No. 2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2
OCR Text ...perature Storage Temperature PT Tch Tstg 2.0 150 -55 to +150 W C C Document No. D11233EJ1V0DS00 (1st edition) Date Published Jun...100 80 ID - Drain Current - A 10 5 2 1 0.5 FORWARD BIAS SAFE OPERATING AREA 10 PW 1 m s ...
Description N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system
N-channel MOS type field effect transistor

File Size 57.30K  /  6 Page

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    2SK2158 D11234EJ1V0DS00

NEC
Part No. 2SK2158 D11234EJ1V0DS00
OCR Text ...perature Storage Temperature PT Tch Tstg 200 150 -55 to +150 0.4 -0.05 3 mW C C Document No. D11234EJ1V0DS00 (1st edition)...100 200 V 7 dT - Derating Factor - % ID - Drain Current - mA 5 V V 0 3. DRAIN CURRENT vs. DRAI...
Description From old datasheet system
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

File Size 57.26K  /  6 Page

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    2SK2159 D11235EJ2V0DS00

NEC, Corp.
NEC[NEC]
Part No. 2SK2159 D11235EJ2V0DS00
OCR Text ...perature Storage Temperature PT Tch Tstg 2.0 150 -55 to +150 W C C Document No. D11235EJ2V0DS00 (2nd edition) Date Published Jun...100 10 5 dT - Derating Factor - % FORWARD BIAS SAFE OPERATING AREA Single pulse 1 80 ID - D...
Description N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system

File Size 59.10K  /  6 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...ercentage of Rated Power - % PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 80 60 40 20 0 0 Tch - Channel Temperature - C TC - Case Temperature -...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    62C256 IS62C256-7 IS62C256-4 IS62C256-70T IS62C256-70TI IS62C256-70UI IS62C256 IS62C256-45T IS62C256-45TI IS62C256-45U I

Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
ETC[ETC]
Integrated Silicon Solution Inc
Part No. 62C256 IS62C256-7 IS62C256-4 IS62C256-70T IS62C256-70TI IS62C256-70UI IS62C256 IS62C256-45T IS62C256-45TI IS62C256-45U IS62C256-70U IS62C256-45UI
OCR Text ...NGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Diss...100% tested. 3. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and F...
Description 32K x 8 Low Power CMOS Static RAM(32K x 8 浣????MOS???RAM)
32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28

File Size 36.75K  /  8 Page

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    FDS2570

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2570
OCR Text ...O ACT IVE FI ELD S TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms Antistatic Cover Tape ESD Label SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon fil...
Description    150V N-Channel PowerTrench MOSFET

File Size 230.92K  /  8 Page

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    HA17431FP HA17431FPA HA17431VP HA17432UA HA17432UPA HA17431P HA17431PA HA17431PNA HA17431VLP HA17431VLTP HA17431 HA17432

HITACHI[Hitachi Semiconductor]
Part No. HA17431FP HA17431FPA HA17431VP HA17432UA HA17432UPA HA17431P HA17431PA HA17431PNA HA17431VLP HA17431VLTP HA17431 HA17432VLTP HA17432VUP 17431 HA17431UPA HA17431VUP
OCR Text ...perature Symbol VKA VPS IK Iref PT Topr HA17431VLP 16 VKA to 16 -50 to +50 -0.05 to +10 150 *4 -20 to +85 HA17431VP 16 -- -50 to +50 -0.05 t...100 to +150 -0.05 to +10 500 *5 -20 to +85 HA17431P/PA 40 -100 to +150 -0.05 to +10 800 *6 -20 to...
Description Regarding the change of names mentioned in the document such as Hitachi Electric and Hitachi XX to Renesas Technology Corp.
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

File Size 231.70K  /  26 Page

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