...0
Thermal resistance
Symbol r JC r CS r JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 2.74 -62.5
...g) resistor
r2
Current Sampling (I D) resistor
Charge
Fig 13. resistive Switching Test Cir...
Description
N-CHANNEL POWEr MOSFET<br>Advanced Power MOSFET<br>
r)
IrF530 IrF530FI
N - CHANNEL ENHANCEMENT MODE POWEr MOS TrANSISTOr
TYPE IrF530 IrF530F I
s s s s s s s s
V DSS 100 V 100 V
r...g ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 ...
Description
From old datasheet system<br>N - CHANNEL ENHANCEMENT MODE POWEr MOS TrANSISTOr<br>
r DS(on) < 0.16
ID 10 A
s s
TYPICAL rDS(on) = 0.12 100% AVALANCHE TESTED rEPETITIVE AVALANCHE DATA AT 100oC LOW gATE CHArgE AVALA...g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance re...
Description
N - CHANNEL ENHANCEMENT MODE POWEr MOS TrANSISTOr<br>From old datasheet system<br>
r) Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IrF530NS) Low-profile through-hole (IrF530NL) 175C Operating Temp...g S
rDS(on) = 0.11 ID = 17A
Description
Fifth generation HEXFETs from International rectifier...
Description
Power MOSFET(Vdss=100V/ rds(on)=0.11ohm/ Id=17A)<br>HEXFET Power MOSFET<br>Power MOSFET(Vdss=100V, rds(on)=0.11ohm, Id=17A)<br>
r) Power MOSFET and Schottky Diode * Ideal for Synchronous rectifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Swit...g
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
Device Features (Ma...
r) Power MOSFET and Schottky Diode * Ideal for Synchronous rectifiers in DC-DC Converters up to 5A Output * Low Conduction Losses * Low Swit...g
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
Device Features (Ma...
...d by max. junction temperature. r Pulse width 400 s; duty cycle 2%. S When mounted on 1 inch square copper board T 50% Duty Cycle, rectang...g x Vg x f )
(
2
)
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q...
Description
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; body Style:Straight FETKY⑩MOSFET肖特基二极管<br>FETKY MOSFET / SCHOTTKY DIODE<br>FETKY⑩ MOSFET / SCHOTTKY DIODE<br>
...d by max. junction temperature. r Pulse width 400 s; duty cycle 2%. S When mounted on 1 inch square copper board T 50% Duty Cycle, rectang...g x Vg x f )
(
2
)
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q...
Description
30V FETKY - MOSFET and Schottky Diode in a SO-8 package<br>FETKY MOSFET / SCHOTTKY DIODE<br>FETKY⑩ MOSFET / SCHOTTKY DIODE<br>
...ontrol FET, are impacted by the r ds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losse...g x Vg x f )
(
2
)
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q...
r) Chip-Set for DC-DC Converters
* * * * N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses
S S S g
1 8 7
A D D D D
2
3
6
Description These new devices emplo...
Description
8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWEr, MOSFET<br>Chip-Set for DC-DC Converters<br>30V Single N-Channel HEXFET Power MOSFET in a SO-8 package<br>