... repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
-10 ICP -3 -1 IC 300ms t=1ms 10ms
- 0.3 - 0.1 - 0.03...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...Non repetitive pulse TC=25C ICP t=1ms 10ms -1 300ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
-10 -3
IC
- 0.3 - 0.1 ...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
... repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
-10 -3 -1 ICP t=0.5ms IC 5ms 1ms
10
(2)
- 0.3 DC - ...
Description
Silicon PNP epitaxial planar type(For power amplification)
... repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
-10 ICP -3 -1 DC IC t=1ms 10ms
10
(2)
- 0.3 - 0.1 -...
Description
Silicon PNP epitaxial planar type power transistor Silicon PNP epitaxial planar type(For low-frequency power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR
... repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
-10 -3 -1
ICP IC t=1ms 10ms DC
10
(2)
- 0.3 - 0....
Description
Silicon PNP epitaxial planar type(For low-frequency power amplification)