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For 0.845 Found Datasheets File :: 3647 Search Time::1.187ms
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				ADPOW[Advanced Power Technology]
Part No.	APT6038BLL APT6038SLL
OCR Text	0.380W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 1...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.86K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6040 APT6040BN APT6045BN
OCR Text	0.40 17.0A 0.45 POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT6045BN 600V N...845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) ...
Description	POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	50.59K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6045BVR
OCR Text	0.450 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) ...
Description	POWER MOS V 600V 15A 0.450 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	62.90K / 4 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	DT455N
OCR Text	... Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 -- 10 0.254 10 Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70...845 Reverse Recovery Time trr -- -- Notes: 2. Pulse Test: Pulse width l 300s, duty cycle l 2.0...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	87.56K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	FR0433M92-TE11
OCR Text	...x. 433.845 433.92 433.995 1.2 2.0 15000 2000 13 72.440 1.916 2.690 30 0.032 - fF H pF C ppm/k2 50 2 6 50 RM CM LM f tech Corporation Page 1 of 3 FR0433M92-TE11 E. Characteristics: F. Test Circuit: ...
Description	433.92 MHz SAW Resonator
File Size	87.00K / 3 Page	View it Online	Download Datasheet

				HOLTEK[Holtek Semiconductor Inc]
Part No.	HT84384 HT84072 HT84144 HT84036 HT84192 84XXX HT84XXX
OCR Text	...ssignment HT84036 VDD 1 (0 , 0 ) 18 OSC AUD0 2 17 16 VSS VSS 4 5 3 AUD1 PB7 6 7 8 9 10 11 12 13 1...845.65 996.45 1182.05 1170.93 1171.03 1171.03 X -1125.31 -1177.49 -939.68 -689.05 -503.45 -352.65 -1...
Description	From old datasheet system Magic VoiceTM
File Size	240.36K / 31 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFT6N100F 6N100F IXFH6N100F
OCR Text	...J TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25C to 150C TJ = 25C...845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 2 3 TO-247 AD...
Description	Power MOSFETs
File Size	190.52K / 4 Page	View it Online	Download Datasheet

				LINER[Linear Technology]
Part No.	LT1182 LT1182CS LT1183 LT1183CS LT1184 LT1184CS LT1184F LT1184FCS
OCR Text	...ECOMMENDED FOR C3B WITH AN ESR 0.5 TO PREVENT DAMAGE TO THE LT1182 HIGH-SIDE SENSE RESISTOR DUE TO SURGE CURRENTS AT TURN-ON. C1 MUST BE A ...845 1.264 1.274 0.03 1.0 -4 -1 0.2 UNITS V V V V V V %/V A mV mV %/V A Measured on LT1184/LT11...
Description	From old datasheet system CCFL/LCD Contrast Switching Regulators
File Size	405.10K / 24 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	NDT455N NDT455NJ23Z
OCR Text	...atures 11.5 A, 30 V. RDS(ON) = 0.015 @ VGS = 10 V RDS(ON) = 0.02 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High ...845 1.2 140 A V ns VGS = 0 V, IS = 2.5 A (Note 2) VGS = 0 V, IF = 2.5 A dIF/dt = 100 A/s = ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 11.5A I(D) \| SOT-223 N-Channel Enhancement Mode Field Effect Transistor1.5A0V.015ΩN沟道增强型场效应管（漏电1.5A, 漏源电压30V，导通电.015Ω
File Size	226.52K / 10 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20167
OCR Text	...t Power = 60 W - Power Gain = 7.0 dB Min - Efficiency = 60% Min Double Input/Output Matched for Wideband Performance Gold Metallization Sili...845 Efficiency (%) VCC = 24 V Pout = 60 W 905 920 935 950 60 57 965 860 875 890 F...
Description	60 Watts, 850-960 MHz RF Power Transistor
File Size	46.77K / 3 Page	View it Online	Download Datasheet

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