|
|
|
|
|
Nichicon, Corp. Nichicon corporation
|
Part No. |
FP-6R3ME471M-HAR FP-6R3ME331M-HAR FP-6R3ME391M-HAR RHA1C151MCN1GS RHA0G561MCN1GS RHA0E681MCN1GS RHA0J561MCN1GS RHA0E102MCN1GS RHA0G681MCN1GS RHA0G152MCN1GS RHA0J331MCN1GS RHA0J391MCN1GS FP-2R5ME821M-HSR FP-016ME151M-HAR FP-010ME151M-HSR RHS0J102MCN1GS FP-4R0ME122M-HSR FP-2R5ME102M-HAR FP-2R5ME152M-HSR FP-4R0ME152M-HSR FP-6R3ME102M-HSR HSHASERIES FP-2R5ME681M-HAR FP-2R5ME821M-HAR FP-6R3ME821M-HSR FP-4R0ME561M-HSR FP-6R3ME561M-HAR RHS0E152MCN1GS RHS0G122MCN1GS FP-6R3ME391M-HSR
|
Description |
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3 V, 470 uF, SURFACE MOUNT ROHS COMPLIANT CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3 V, 330 uF, SURFACE MOUNT ROHS COMPLIANT CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3 V, 390 uF, SURFACE MOUNT ROHS COMPLIANT CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 16 V, 150 uF, SURFACE MOUNT ROHS COMPLIANT FUNCTIONALA POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS FUNCTIONAL POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS
|
File Size |
1,072.75K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
Agilent (Hewlett-Packard) Mimix Broadband, Inc. Lumex, Inc. AVX, Corp. TE Connectivity, Ltd. Amphenol, Corp. ZF Electronics, Corp. Advanced Analogic Technologies, Inc. Maxim Integrated Products, Inc. Black Box, Corp. Rectron Semiconductor Advanced Interconnections, Corp. Littelfuse, Inc. Xilinx, Inc. HIROSE ELECTRIC Co., Ltd. Analog Devices, Inc. Bourns, Inc. Panduit, Corp. JST Mfg. Co., Ltd. Ecliptek, Corp. Agilent(Hewlett-Packard)
|
Part No. |
5082-313E-H0000 5082-313E-HG000 5082-313E-HH000 5082-313E-HI000 5082-313E-HJ000 5082-313E-HK000 5082-313E-HL000 HDSP-313E-H0000 5082-313Y-L0300 HDSP-313Y-L0100 5082-313Y-L0100 HDSP-313Y-L0000 5082-313Y-L0000 5082-313Y-L0200 5082-313Y-0L100 5082-313Y-0L200 5082-313Y-0L300 HDSP-313Y-0L100 HDSP-313Y-0L200 5082-313Y-I0300 HDSP-313Y-I0100 HDSP-313Y-I0200 5082-313Y-0L000 HDSP-313Y-0L000 HDSP-313Y-0L300 5082-313Y-I0200 HDSP-313Y-I0000 HDSP-313Y-I0300 5082-313E-KL000 5082-313E-GJ000 5082-313G-0H300 5082-313G-0H400 HDSP-313G-0H300 5082-313E-KJ000 5082-313G-IK300 HDSP-313E-GJ000 5082-313G-IK400 5082-313G-IK000 HDSP-313G-IK000 HDSP-313G-IK300 HDSP-313G-IK400 5082-313G-0H000 5082-313G-0H500 HDSP-313E-KL000 HDSP-313G-0H500 HDSP-313G-0H400 HDSP-313G-0H000 5082-313Y-0H000 5082-313Y-0H100 HDSP-313Y-0H000 HDSP-313Y-0H100 HDSP-313Y-0H200 HDSP-313Y-0H300 5082-313Y-0H200 5082-313Y-0H300 5082-313A-0L000 HDSP-313A-0L000 5082-311A-LJ000 HDSP-311A-LJ000 HDSP-313E-LH000 5082-313E-LH000 5082-313Y-GK200 5082-313Y-GK300 HDSP-313Y-GK300 5082-313Y-KG300 5082-313Y-GK000 5082-313Y-GJ300 HDSP-313Y-GJ200 HDSP-313Y-GJ300 5082-313Y-JH100 HDSP-313Y-JH200 HDSP-313Y-KG200 5082-313Y-KJ000 HDSP-313Y-KJ000 HDSP-313Y-KJ300
|
Description |
HDSP-313Y · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display HDSP-313G · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display HDSP-313E · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display HDSP-313A · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display HDSP-311Y · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display HDSP-311G · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display HDSP-311E · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display HDSP-311A · 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display CAP 0.01UF 100V 0.1 X7R RAD-.10IN .200X.260 CONF T&R CAP,X7R,0.1,10N,100V,10% 一十点一六毫米(0.4英寸)单位通用七段显示 CAP 0.1UF 100V 0.05 X7R RAD-.10IN .200X.260 CONF T&R 一十点一六毫米(0.4英寸)单位通用七段显示 Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs 一十点一六毫米(0.4英寸)单位通用七段显示 MOSFET Driver IC; MOSFET Driver Type:Single Driver, Low Side Non-Inverting; Peak Output High Current, Ioh:2A; Rise Time:20ns; Fall Time:20ns; Load Capacitance:1000pF; Package/Case:5-SOT-23; Number of Drivers:1 一十点一六毫米(0.4英寸)单位通用七段显示 10NF/50V MONO-CER. LS.1 一十点一六毫米(0.4英寸)单位通用七段显示 Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOP; No of Pins: 20; Container: Tape & Reel 一十点一六毫米(0.4英寸)单位通用七段显示 CAP 1000PF 100V 0.05 NP0(C0G) RAD-.10IN .200X.260 CONF T&R 一十点一六毫米(0.4英寸)单位通用七段显示 CAP 0.1UF 50V 0.2 Z5U RAD-.10IN .200X.260 CONF T&R 一十点一六毫米(0.4英寸)单位通用七段显示 10.16 mm (0.4 inch) Single Digit General Purpose Seven Segment Display 一十点一六毫米(0.4英寸)单位通用七段显示 TVS Diode; Stand-Off Voltage, VRWM:6V; Breakdown Voltage, Vbr:8V; Capacitance, Cd:50pF; Package/Case:16-WSOIC; Breakdown Voltage Min:8V; Leaded Process Compatible:No; Mounting Type:Surface Mount; No. of Lines Protected Max:1 RoHS Compliant: No Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):50A; Non Repetitive Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:1.6V; Package/Case:SO-32B DIODE, STANDARD, 50A, 1200V, STUD; Voltage, Vrrm:1200V; Current, If av:50A; Case style:E12; Current, Ifs max:700A; Diode type:Standard recovery; Polarity, diode:Stud Cathode; Thread size:M8; Voltage, forward at If:1.6V RoHS Compliant: Yes RES, 0402, TF, 1.43K, 1%, 1/16W CONV DC-DC 24V IN 12V OUT PL 15W CONV DC-DC 24V IN 5V OUT 20W Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: QSOP; No of Pins: 20; Container: Tape & Reel Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: QSOP; No of Pins: 20; Container: Rail CONV DC-DC 24V IN 5V OUT PL 15W CONV DC-DC 24V IN 3.3 V OUT PL CONV DC-DC 48V IN 5V OUT PL 15W COIL, INDUCTOR CHIP 4.7UH 20% DD11 POWER ENTRY MODUL MOSFET Driver IC; MOSFET Driver Type:Dual Drivers, Low Side Non-Inverting; Peak Output High Current, Ioh:2A; Rise Time:20ns; Fall Time:20ns; Load Capacitance:1000pF; Package/Case:8-MSOP; Number of Drivers:2; Supply Voltage Max:16V THYRISTOR, 19A 1200V B-1THYRISTOR, 19A 1200V B-1; Voltage, Vrrm:1200V; Current, It av:10A; Case style:B1; Current, It rms:30A; Current, Itsm:250A; Voltage, Vgt:3.0V; Current, Igt:100mA; Thread size:M5; Thyristor/Triac t DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E11; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1600V; On-State RMS Current, IT(rms):2800A; Peak Non Repetitive Surge Current, Itsm:53000A; Gate Trigger Current Max, Igt:300uA CONV DC-DC 48V IN 3.3V OUT 20W MOD PWR ENTRY STD 20A 2PL QC PNL CAP 1000PF 100V 0.05 NP0(C0G) RAD-.10IN .200X.260 CONF T&R OBS RES, 1.47K, 0.06W, 1%, 0402 CAP 0.001UF 63V 5% METALLI Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Rail Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: SSOP; No of Pins: 20; Container: Tape & Reel METAL FILM RESISTOR, 10K, 1%, 0.1W, 0603 CAP 1000PF 100V 0.1 NP0(C0G) RAD-.10IN .200X.260 CONF T&R Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOP; No of Pins: 20; Container: Rail Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOP; No of Pins: 20; Container: Tape & Reel 0.1 UF 20% 50V Z5U RADIAL 0.1 CAP CAP 0.1UF 50V 80-20% Y5V RAD-.10IN .200X.260 CONF BULK CAP 0.1UF 50V 0.1 X7R RAD-.10IN .200X.260 CONF BULK CAP CER 0.1UF 50V 10% RADIAL CAP 0.1UF 50V 0.1 X7R RAD-.10IN .200X.260 CONF T&R CAP 0.01UF 50V 0.1 X7R RAD-.10IN .200X.260 CONF T&R CAP 0.01UF 100V 0.1 X7R RAD-.10IN .200X.260 CONF T&R RES 51 OHM 1/10W 5% 0603 SMD Pulse Width Modulation (PWM) Controller IC; Topology:Buck, Half Bridge; Control Mode:Voltage; Number of PWM Outputs:2; Input Voltage Primary Min:-0.5V; Input Voltage Primary Max:14V; Duty Cycle Max:95% Controller IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No Controller IC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes CAP 12PF 200V 0.1 NP0(C0G) RAD-.10IN .200X.260 CONF BULK RES CHIP 820 OHM 1/16W 1% 0402 SMT CAP 1000PF 100V 0.2 Z5U RAD-.10IN .200X.260 CONF BULK Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs; Package: SSOP; No of Pins: 20; Container: Rail CAP 120PF 200V 0.01 NP0(C0G) RAD-.10IN .200X.260 CONF T&R Surface Mount Resistors Thick Film Chip Resistors CONV DC-DC 24V IN 15V OUT PL 15W CONV DC-DC 48V IN 5V OUT NL 15W MOSFET Driver IC; MOSFET Driver Type:Single Driver, Low Side Inverting; Peak Output High Current, Ioh:2A; Rise Time:20ns; Fall Time, tf:20ns; Load Capacitance:1000pF; Package/Case:5-SOT-23; No. of Drivers:1; Supply Voltage Max:16V RoHS Compliant: No MOSFET Driver IC; MOSFET Driver Type:Single Driver, Low Side Inverting; Peak Output High Current, Ioh:2A; Rise Time:20ns; Fall Time:20ns; Load Capacitance:1000pF; Package/Case:5-SOT-23; Number of Drivers:1; Supply Voltage Max:16V Pulse Width Modulation (PWM) Controller IC; Topology:Buck (Step Down); Control Mode:Voltage; Number of PWM Outputs:4; Input Voltage Primary Min:-0.3V; Input Voltage Primary Max:15V; Duty Cycle Max:95% MOSFET Driver IC; Package/Case:5-SOT-23; Number of Drivers:1; Supply Voltage Max:16V; Driver Type:MOSFET; Leaded Process Compatible:No; Output Current Max:2A; Packaging:Cut Tape; Peak Reflow Compatible (260 C):No CERAMIC CONFORMALLY COATED CAPACITOR, .010UF 50.0V: CAP 0.1UF 100V 10% X7R RAD-.10IN .200X.260 CONF BULK IC, LC03-3.3, TVS DIODE ARRAY, JEDEC SO-8
|
File Size |
376.74K /
12 Page |
View
it Online |
Download Datasheet |
|
|
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
Part No. |
M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M38232G4-XXXFP M38232G4-XXXHP M38233G4-XXXFP M38233G4-XXXHP M38234G4-XXXFP M38234G4-XXXHP M38235G4-XXXFP M38230G6-XXXFP M38230G6-XXXHP M38231G6-XXXFP M38231G6-XXXHP M38232G6-XXXFP M38232G6-XXXHP M38233G6-XXXFP M38233G6-XXXHP M38234G6-XXXFP M38234G6-XXXHP M38235G6-XXXFP M38235G6-XXXHP M38236G6-XXXHP M38237G6-XXXFP M38237G6-XXXHP M38238G6-XXXFP M38230G7-XXXFP M38230G7-XXXHP M38231G7-XXXFP M38231G7-XXXHP M38232G7-XXXFP M38232G7-XXXHP M38233G7-XXXFP M38233G7-XXXHP M38234G7-XXXFP M38234G7-XXXHP M38235G7-XXXFP M38235G7-XXXHP M38236G7-XXXFP M38236G7-XXXHP M38237G7-XXXFP M38237G7-XXXHP M38238G7-XXXFP M38238G7-XXXHP M38239G7-XXXFP M38239G7-XXXHP M38230G8-XXXFP M38230G8-XXXHP M38231G8-XXXFP M38231G8-XXXHP M38232G8-XXXFP M38232G8-XXXHP M38233G8-XXXFP M38233G8-XXXHP M38234G8-XXXFP M38234G8-XXXHP M38235G8-XXXFP M38235G8-XXXHP M38236G8-XXXFP M38236G8-XXXHP M38237G8-XXXFP M38237G8-XXXHP M38238G8-XXXFP M38238G8-XXXHP M38230GA-XXXFP M38230GA-XXXHP M38231GA-XXXFP M38231GA-XXXHP M38232GA-XXXFP M38232GA-XXXHP M38233GA-XXXFP M38233GA-XXXHP M38234GA-XXXFP M38234GA-XXXHP M38235GA-XXXFP M38235GA-XXXHP M38236GA-XXXFP M38236GA-XXXHP M38237GA-XXXFP M38237GA-XXXHP
|
Description |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
File Size |
901.80K /
76 Page |
View
it Online |
Download Datasheet |
|
Bom2Buy.com
Price and Availability
|