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SeCoS Halbleitertechnologie
SeCoS Halbleitertechnol...
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| Part No. |
SSG10N10 SSG10N10-15
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| OCR Text |
100v , r ds(on) 21m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. sop - 8 10n10sc ... |
| Description |
N-Channel Enhancement Mode Power MOSFET
N-Ch Enhancement Mode Power MOSFET
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| File Size |
1,106.29K /
4 Page |
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Download Datasheet
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SamHop Microelectronics...
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| Part No. |
STT04N20
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| OCR Text |
...switching characteristics v dd =100v i d =0.5a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.5a v ds =10v , i d =0.5a input capacitance output capacitance dynam... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
123.46K /
7 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HIP2101IB HIP2101IBZ HIP2101IRZ HIP2101IR4 HIP2101 HIP2101IR HIP2101IR4Z HIP2101EIBZ
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| OCR Text |
100v/2A Peak, Low Cost, High Frequency Half Bridge Driver
The HIP2101 is a high frequency, 100v Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input ... |
| Description |
100v/2A Peak/ Low Cost/ High Frequency Half Bridge Driver
100v/2A Peak, Low Cost, High Frequency Half Bridge Driver
100v/2A Peak Low Cost High Frequency Half Bridge Driver
Driver, Half Bridge, 100v/2A Peak, TTL Inputs, High Frequency, Drives N-Channel
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| File Size |
285.46K /
12 Page |
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SamHop Microelectronics...
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| Part No. |
STT03N20
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| OCR Text |
...switching characteristics v dd =100v i d =0.35a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.35a v ds =10v , i d =0.35a input capacitance output capacitance dy... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
125.52K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT02N20
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| OCR Text |
...switching characteristics v dd =100v i d =0.7a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.7a v ds =10v , i d =0.7a input capacitance output capacitance dyna... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
132.69K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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