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IXYS
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Part No. |
IFRP460
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OCR Text |
...tj=25 0 c v gs = 10v i d = 12a figure 2. output characteristics at 125 o c figure 1. output characteristics at 25 o c figure 5. drain current vs. case temperature figure 6. admittance curves figure 3. r ds(on) normalized to value at i... |
Description |
Power MOSFET
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File Size |
132.99K /
4 Page |
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Nell Semiconductor Co., Ltd
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Part No. |
12PT06AI-S 12FT08G-S 12FT08G-T 12FT06F-S 12FT06F-T
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OCR Text |
12a symbol i t rms ( ) rms on state current full sine wave i tsm non repetitive surge peak on state current full cycle t initial = 25 c) (...d-pak) i = 2xl , t ns g gt r 100 1 2 3 to-220ab (lnsulated) (12ptxxf) (12ptxxg) (12ptxxa) (12ptxxai)... |
Description |
Sensitive and Standard SCRs, 12a
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File Size |
1,112.57K /
7 Page |
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Fairchild Semiconductor, Corp.
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Part No. |
SGF23N60UFdTU
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OCR Text |
...e : v ce(sat) = 2.1 v @ i c = 12a ? high input impedance ? co-pak, igbt with frd : t rr = 42ns (typ.) absolute maximum ratings t c...d maximum power dissipation @ t c = 25 c75 w maximum power dissipation @ t c = 100 c30 ... |
Description |
23 A, 600 V, N-CHANNEL IGBT TO-3PF, 3 PIN
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File Size |
635.01K /
10 Page |
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it Online |
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Alpha
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Part No. |
AOU454L
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OCR Text |
... =10v, v ds =5v v gs =10v, i d =12a reverse transfer capacitance i f =12a, di/dt=100a/ s v gs =0v, v ds =20v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions... |
Description |
N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应
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File Size |
65.40K /
5 Page |
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it Online |
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Price and Availability
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