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IDT
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| Part No. |
IDT72V71660
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| OCR Text |
...1 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52
156 155 154 ...50mm pitch, 28mm x 28mm (DR208-1, order code: DR) TOP VIEW
3
IDT72V71660 3.3V TIME SLOT INTERC... |
| Description |
TSI-TDM Switches
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| File Size |
213.04K /
31 Page |
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it Online |
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idt
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| Part No. |
IDT74ALVCH16245PA
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| OCR Text |
...5
1A6
20
2B6
1A7
22
2B7
1A8
37
2A8
12
1B8
23
2B8
EXTENDED COMMERCIAL TEMPERATURE RANGE
1
c 1999 Integrated Device Technology, Inc.
MARCH 1999
DSC-4697/-
IDT74ALVCH16245 3.3V CMOS 16-BIT BUS T... |
| Description |
IC,BUS TRANSCEIVER,DUAL,8-BIT,AVC/ALVC-CMOS,TSSOP,48PIN,PLASTIC
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| File Size |
91.47K /
6 Page |
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it Online |
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IDT
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| Part No. |
IDT72V70210
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| OCR Text |
...1 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 TMS TDI TDO TCK TRST GND DS CS R/W
ODE
A1 A2 A3 A4 GND
RESET GND CLK
GND...50mm pitch, 20mm x 20mm (DA144-1, order code: DA) TOP VIEW
3
30 31 32 33 34 35 36
VCC
ID... |
| Description |
TSI-TDM Switches
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| File Size |
110.43K /
19 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
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| OCR Text |
... V, I C =6 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown ... |
| Description |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
266.40K /
13 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPP70N10L SPB70N10L
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| OCR Text |
...ol min. Values typ. 10 74 160 3.22 max. 15 110 240 nC V nC Unit
QG(th) Qg(5) Qg V(plateau)
-
VDD = 80 V, ID0,1 A, VGS = 0 to 1 V Gate charge at Vgs=5V VDD = 80 V, ID = 70 A , VGS = 0 to 5 V Gate charge total VDD = 80 V, ID = 70 A, ... |
| Description |
SIPMOS ? Power Transistor
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| File Size |
87.49K /
9 Page |
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it Online |
Download Datasheet |
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http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ101SL-4
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| OCR Text |
...tf
27 1.4 15 24 2.98 40 nC 2.1 22 36 V 3 02/Oct/1997
VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8
Gate charge at threshold
Qg(th) Qg(5)
-
VDD = 40 V, ID 0.1 A, VGS =0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 4.1 A, VGS =... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
89.10K /
8 Page |
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SIEMENS AG
Infineon Technologies AG
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| Part No. |
BUZ102S-4
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| OCR Text |
...4 A RG = 7.1
Rise time
tr
22 33
VDD = 30 V, VGS = 10 V, ID = 6.4 A RG = 7.1
Turn-off delay time
td(off)
60 90
VDD = 30 V, VGS = 10 V, ID = 6.4 A RG = 7.1
Fall time
tf
30 2.5 35 45 4 45 nC 3.75 52 68 V -
VDD = 30 V... |
| Description |
6.4 A, 55 V, 0.028 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS ? Power Transistor
Quad-Channel SIPMOS Power Transistor
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| File Size |
91.45K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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