|
|
|
MICROSEMI[Microsemi Corporation]
|
Part No. |
LX5506
|
OCR Text |
...f 5V, the same device provides +24dbm linear OFDM output power with 5% EVM. The LX5506 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes ... |
Description |
InGaP HBT 4.5 - 6GHz Power Amplifier
|
File Size |
496.83K /
10 Page |
View
it Online |
Download Datasheet |
|
|
|
MACOM[Tyco Electronics]
|
Part No. |
MAAPGM0076-DIE
|
OCR Text |
...d Efficiency at VD = 10V, Pin = 24dbm, and 25% IDSS
Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS
50 48 46 44 42 40
50 48 46 44 42 40
Psat (dBm)
Psat (dBm)
38 36 34 32 30 28 26 24 22 20 1.0 1.3 1.5 1.8 2.0 ... |
Description |
Amplifier, Power, 16W 1.3-2.5 GHz
|
File Size |
829.98K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
MACOM[Tyco Electronics]
|
Part No. |
MAAPGM0078-DIE
|
OCR Text |
...d Efficiency at VD = 10V, Pin = 24dbm, and 25% IDSS
50 47 44 41 50 47 44 41
Psat (dBm)
Psat (dBm)
38 35 32 29 26 23 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 6V 8V 10V
38 35 32 29 26 23 20 2.00 10C 55C 110C
2.50
3.00
... |
Description |
Amplifier, Power, 12W 2.0-6.0 GHz
|
File Size |
890.67K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
|
Part No. |
MAX2055EUP
|
OCR Text |
...g -0.3V to +(VCC + 0.25V) 20dBm 24dbm -40C to +85C +150C -65C to +165C +300C 2100mW 21.7mW/C
II. Manufacturing Information A. Description/Function: B. Process: C. Number of Device Transistors: D. Fabrication Location: E. Assembly Locatio... |
Description |
RELIABILITY REPORT FOR MAX2055EUP PLASTIC ENCAPSULATED DEVICES
|
File Size |
124.22K /
8 Page |
View
it Online |
Download Datasheet |
|
|
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
MGF0917A
|
OCR Text |
...EATURES
* High output power Po=24dbm(TYP.) @f=1.9GHz,Pin=4dBm * High power gain Gp=21dB(TYP.) @f=1.9GHz * High power added efficiency add=38%(TYP.) @f=1.9GHz,Pin=4dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fi... |
Description |
L & S BAND GaAs FET [ SMD non matched ] L & S BAND GaAs FET [ SMD non - matched ]
|
File Size |
43.54K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
MACOM[Tyco Electronics]
|
Part No. |
PA1223
|
OCR Text |
... ** IP3 measured with 2 tones @+24dbm. per tone @ 1 Mhz apart *** A 10 microfarada capacitor is required from pin 3 (+V) to ground Min and max values from 0 to 85 degrees C
38
P o u t (d B m ) v s . F r e q u e n c y
37 2110
2130
... |
Description |
2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier
|
File Size |
57.77K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|