... = 0V TJ = 25C, IF = 37A, VDD = 30v di/dt = 100A/s
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
...12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sampl...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
...V, See Fig. 6 and 13 --- VDD = 30v --- ID = 72A ns --- RG = 9.1 --- RD = 0.34, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from packa...12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
50
0 25 50 75 100 125 150 175
Start...
... Avalanche Rated
D
VDSS = 30v
G S
RDS(on) = 0.031 ID = 35A
Description
Fifth Generation HEXFETs from International Rectifier u...12a. Unclamped Inductive Test Circuit
50
0
V D D = 15 V
25 50 75 100 125 150
A
175
...
...cations.
Features
VDS (V) = 30v ID = 12a RDS(ON) < 14m (VGS = 10V) RDS(ON) < 16m (VGS = 4.5V) RDS(ON) < 22m (VGS = 2.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VD...
Description
N-Channel Enhancement Mode Field Effect Transistor
30v/12a, RDS(ON)=100m(max) @ VGS=10V RDS(ON)=200m(max) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages
Pin Description
1
1 2 3
2
3
G
D
S
Applications
*...
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A)
... Avalanche Rated
D
VDSS = 30v RDS(on) = 0.031
G
ID = 33A
S
Description
Fifth Generation HEXFETs from International Rectifie...12a. Unclamped Inductive Test Circuit
50
V(BR)DSS tp VDD VDS
0 25 50 75 100 125 150
Star...
Description
Power MOSFET(Vdss=30v, Rds(on)=0.031ohm, Id=33A? 30v Single N-Channel HEXFET Power MOSFET in a I-Pak package 30v Single N-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=30v, Rds(on)=0.031ohm, Id=33A?) Power MOSFET(Vdss=30v, Rds(on)=0.031ohm, Id=33A) Power MOSFET(Vdss=30v/ Rds(on)=0.031ohm/ Id=33A)
...T
D
l l l l l l l
VDSS = 30v
G S
RDS(on) = 0.019 ID = 46A
Description
Fifth Generation HEXFETs from International Rectifier u...12a. Unclamped Inductive Test Circuit
100
V(BR)DSS tp VDD VDS
0
VD D = 1 5V
25 50 75 10...
Description
Power MOSFET(Vdss=30v, Rds(on)=0.019ohm, Id=46A? Power MOSFET(Vdss=30v, Rds(on)=0.019ohm, Id=46A) Power MOSFET(Vdss=30v Rds(on)=0.019ohm Id=46A) Power MOSFET(Vdss=30v, Rds(on)=0.019ohm, Id=46A?)
.................................. 30v Switch Voltage (COL) .............................................. 35V SHDN Pin Voltage ..................12a typ) current drain from VIN. Protection Features There are three modes of protection in the LT15...
Description
Ultralow Noise 2A Switching Regulator; Package: SO; No of Pins: 16; Temperature Range: -40°C to 85°C 2 A SWITCHING REGULATOR, 250 kHz SWITCHING FREQ-MAX, PDSO16 Ultralow Noise 2A Switching Regulators