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600v Datasheet PDF File

For 600v Found Datasheets File :: 16319 Search Time::1.016ms
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				Infineon Technologies AG
Part No.	IDC08S60CE
OCR Text	... die size package idc08s60ce 600v 8a 1.658 x 1.52 mm 2 sawn on foil mechanical parameter raster size 1.658x 1.52 anode pad size 1.421 x 1.283 area total 2.52 mm 2 thickness 355 m wafer size 100 mm max. possible chi...
Description	2nd generation thinQ!TM SiC Schottky Diode
File Size	101.50K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24H09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 200A, VGE = 15V VCC = 600v, IC = 200A VGE = 15V RG = 1.6 Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = -400A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part ...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	76.45K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24F09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 200A, VGE = 15V VCC = 600v, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	124.22K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKP20N60T IKP20N60T08
OCR Text	...tp://www.infineon.com/igbt/ VCE 600v 600v IC 20A 20A VCE(sat),Tj=25C 1.5V 1.5V Tj,max 175C 175C Marking K20T60 K20T60 Package PG-TO-220-3-1 PG-TO-247-3 C G E PG-TO-247-3 * * * * * * * Type IKP20N60T IKW20N60T Maximum Rati...
Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
File Size	448.94K / 14 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DY-24NF09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 150A, VGE = 15V VCC = 600v, IC = 150A VGE = 15V RG = 2.1, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	86.99K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100TL-24NF
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 100A, VGE = 15V VCC = 600v, IC = 100A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)1 FWDi part (1/6 module)1 Case to fin, The...
Description	HIGH POWER SWITCHING USE
File Size	49.67K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100TL-24NF09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600v, IC = 100A, VGE = 15V VCC = 600v, IC = 100A VGE = 15V RG = 3.1, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)1 FWDi part (1/6 module)1 Case to heat sink, Thermal compound Applied ...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	97.29K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPW60R070C6
OCR Text	600v CoolMOSTM C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600v CoolMOSTM C6 Power Transistor IPW60R070C6 1 Description CoolMOSTM is a revolutionary technology for hig...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	1,563.38K / 13 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100E3U-24H09 CM100E3U-24H
OCR Text	...K/W K/W V ns C K/W K/W VCC = 600v, IC = 100A, VGE = 15V VCC = 600v, IC = 100A VGE = 15V RG = 3.1 Resistive load IE = 100A, VGE = 0V IE = 100A die / dt = -200A / s Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, ...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	71.76K / 4 Page	View it Online	Download Datasheet

For 600v Found Datasheets File :: 16319 Search Time::1.016ms
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