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  amplification Datasheet PDF File

For amplification Found Datasheets File :: 8396    Search Time::3.671ms    
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    Mitsubishi Electric Corporation
Part No. M54531P/FP
OCR Text ...amping diode reverse current dc amplification factor symbol unit parameter test conditions limits min typ + max collector-emitter saturation voltage input current electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) v (b...
Description Transistor Array

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    Mitsubishi Electric
Part No. M63806P
OCR Text ...own voltage on input voltage dc amplification factor i ceo = 10 m a i in = 1ma, i c = 10ma i in = 2ma, i c = 150ma i in = 1ma, i c = 10ma v ce = 10v, i c = 10ma v ce(sat) collector-emitter saturation voltage electrical characterist...
Description (M63806xx) 8-UNIT 300mA TRANSISTOR ARRAY

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    M54583FP

Mitsubishi Electric Semiconductor
Part No. M54583FP
OCR Text ...5v, i c = 350ma, ta = 25 dc ? amplification ? factor hfe ma 3.0 1.9 v cc =5v,v i = vcc 3.6v supply current (one circuit coming on) i cc a 600 320 v i = v cc 3.6v input current i i 1.6 0.98 v 2.2 1.2 v i = v cc 3.6v collector-e...
Description 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE

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    M52732SP

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M52732SP
OCR Text amplification DESCRIPTION The M52732SP is a semiconductor integrated circuit that has 3channels of built-in amplifiers in the broad-band video amplifier having a 75MHz band. Every channel is provided with a broad-band amplifier, contrast c...
Description 3-CHANNEL VIDEO amplification

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    Mitsubishi Electric Corporation
Part No. M54534FP M54534P/FP
OCR Text ...5pf (note 1) t on t off h fe dc amplification factor aug.1999 ton 50% 50% 50% 50% toff input output pg output 50 w (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 3.2v p...
Description 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

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    M54522WP

Mitsubishi Electric Semiconductor
Part No. M54522WP
OCR Text ... = 4v, i c = 300ma, ta = 25 dc amplification factor h fe 1.6 0.95 ? v 2.4 1.15 ? v i = 8v, i c = 400ma collector-emitter saturation voltage v ce(sat) v ? ? 40 i ceo = 100 a collector-emitter breakdown voltage v (br)ceo max typ min uni...
Description 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

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    M54522FP

Mitsubishi Electric Semiconductor
Part No. M54522FP
OCR Text ... = 4v, i c = 300ma, ta = 25 dc amplification factor h fe a 100 ? ? v r = 40v clamping diode reverse current i r v 2.4 1.5 ? i f = 400ma clamping diode forward voltage v f ma 1.8 0.85 0.3 v i = 17v input current i i 1.6 0.95 ? v i = 4v,...
Description 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE

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    M54566WP

Mitsubishi Electric Semiconductor
Part No. M54566WP
OCR Text ...3.5v 1.4 3.0 ma h fe dc amplification factor v ce = 4v, v cc =5v, i c = 350ma, ta = 25 2000 10000 limits symbol parameter test conditions min typ max unit t on turn-on time 95 t off turn-of...
Description 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

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    M54566DP

Mitsubishi Electric Semiconductor
Part No. M54566DP
OCR Text ... = 5v, i c = 350ma, ta = 25 dc amplification factor h fe ma 3.0 1.4 v cc = 5v, v i = v cc 3.5v supply current (one circuit coming on) i cc ma 0.58 0.3 v i = v cc 3.5v input current i i 1.6 0.9 v 2.2 1.1 v i = v cc 3v collector-e...
Description 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

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Price & Availability of amplification
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Part # Manufacturer Description Price BuyNow  Qty.
UMZ1NFHATR
UMZ1NFHATR
ROHM Semiconductor Bipolar Transistors - BJT TRANSISTOR HIGH RELIABILITY 3000: USD0.08
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147000
QS5Y2FSTR
QS5Y2FSTR
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24000: USD0.178
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UMD3NTR
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6000: USD0.08
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UMD9NFHATR
UMD9NFHATR
ROHM Semiconductor Digital Transistors TRANS DIGITAL PNP+NPN 3000: USD0.1
6000: USD0.098
9000: USD0.088
24000: USD0.086
30000: USD0.085
45000: USD0.073
75000: USD0.072
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0
2SCR523MT2L
2SCR523MT2L
ROHM Semiconductor Bipolar Transistors - BJT NPN GEN PURP AMP TRANSISTOR 8000: USD0.0376
16000: USD0.0369
24000: USD0.0362
48000: USD0.0355
200000: USD0.0235
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