driver
Features
n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/d...current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to...
driver
Features
* Floating channel designed for bootstrap operation * * * * * * * *
Fully operational to +500V or +600V Tolerant to negat...current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to...
...arity of D.U.T for P-Channel
driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery current Body Diode Forward current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Appli...
Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
...arity of D.U.T for P-Channel
driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery current Body Diode Forward current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Appli...
...arity of D.U.T for P-Channel
driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery current Body Diode Forward current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Appli...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
...arity of D.U.T for P-Channel
driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery current Body Diode Forward current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Appli...
Description
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
...J)
15V
TOP
VDS
L
driver
200
BOTTOM
31A 53A 75A
ID
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
150
A
0.01...current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250A
3.0
Charge
...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
... * * * * dv/dt controlled by RG driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
driver G...current Body Diode Forward current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Appli...
Description
Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
...nche Energy (mJ)
VDS
L
driver
560
BOTTOM
+ V - DD
420
A
0.01
280
Fig 12a. Unclamped Inductive Test Circuit
...current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0
3.0
Charge
Fig 13a. Ba...
Description
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
...nche Energy (mJ)
VDS
L
driver
560
BOTTOM
+ V - DD
420
A
0.01
280
Fig 12a. Unclamped Inductive Test Circuit
...current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0
3.0
Charge
Fig 13a. Ba...
Description
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)