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IXYS
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| Part No. |
IXGF30N400
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| OCR Text |
... gate 5 = collector 2 = emitter isoplus i4-pak tm isolated tab 1 5 2 free datasheet http:///
ixys reserves the right to change limits, test conditions, and dimensions. ixgf30n400 symbol test conditions ... |
| Description |
High Voltage IGBT
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| File Size |
215.77K /
5 Page |
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it Online |
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http://
IXYS[IXYS Corporation]
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| Part No. |
IXFE36N100 IXFE34N100
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| OCR Text |
... V V V V A A A A A mJ J V/ns
isoplus 227TM (IXFE)
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features W C C C C V~ V~
*Conforms to SOT-227B outline *Lo... |
| Description |
HiPerFET-TM Power MOSFET
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| File Size |
423.71K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFR100N25
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| OCR Text |
...A A mJ J V/ns W C C C C V~ g
isoplus 247TM E153432
Isolated backside*
G = Gate S = Source
D = Drain
TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C
* Patent pending
1.6 mm (0.063 in.) fro... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs isoplus247
From old datasheet system
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| File Size |
80.35K /
2 Page |
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it Online |
Download Datasheet |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFR12N100Q IXFR10N100Q
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| OCR Text |
...mJ V/ns W C C C C V~ g Features isoplus 247TM
VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight
G
D
Isolated back surface* D = Drain
G = Gate S = Source * Patent pending
* Silicon chip on Direct-Copp... |
| Description |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 10 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
32.75K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFR32N50Q 32N50Q IXFR30N50 IXFR30N50Q
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| OCR Text |
...A A J mJ V/ns W C C C C V~ g
isoplus 247TM E 153432
G
D
Isolated back surface* G = Gate S = Source * Patent pending D = Drain
Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mountin... |
| Description |
From old datasheet system
HiPerFET Power MOSFETs isoplus247
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| File Size |
91.96K /
4 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXFR90N30
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| OCR Text |
...A A mJ J V/ns W C C C C V~ g
isoplus 247TM E153432
Isolated backside* G = Gate S = Source D = Drain
* Patent pending
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
Features l Silicon chip on Direc... |
| Description |
HiPerFET Power MOSFETs isoplus247
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| File Size |
53.78K /
2 Page |
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it Online |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXGR24N60C
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| OCR Text |
... V V V A A A A W C C C C V g
isoplus 247 E153432
G
C
E
Isolated Backside*
G = Gate, E = Emitter
C = Collector
* Patent pending
Features
l l l l l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from ... |
| Description |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:24; Connector Shell Size:24; Connecting Termination:Crimp; Circular Shell Style:Right Angle Plug; Body Style:Right Angle 42 A, 600 V, N-CHANNEL IGBT
HiPerFASTTM IGBT isoplus247TM (Electrically Isolated Back Surface)
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| File Size |
55.09K /
2 Page |
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it Online |
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