|
|
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
Part No. |
PXAS30 PXAS30KBA PXAS30KBBE PXAS30KFA PXAS30KFBE PXAS33KBA PXAS33KBBE PXAS33KFA PXAS33KFBE PXAS37KBA PXAS37KBBE PXAS37KFA PXAS37KFBE XA-S3 PXAS31KFA PXAS31KFBE PXAS83XFA PXAS83XFBE
|
Description |
XA 16-bit microcontroller 32K/1K OTP/ROM/ROMless, 8-channel 8-bit A/D, low voltage 2.7 V.5.5 V, I2C, 2 UARTs, 16mb address range XA 16-bit microcontroller 32 K/1 K OTP/ROM/ROMless, 8-channel 8-bit A/D, low voltage 2.7 V.5.5 V, I2C, 2 UARTs, 16 MB address range
|
File Size |
287.07K /
52 Page |
View
it Online |
Download Datasheet |
|
|
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC http://
|
Part No. |
AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29LV160BT70REIB AM29LV160BB70REI AM29LV160BT70RWCI AM29LV160BB70RWCEB AM29LV160BB70REIB AM29LV160BB70RWCI AM29LV160BB70RWCIB AM29LV160BT70RWCIB AM29LV160BB70RWCCB AM29LV160BT70RWCC AM29LV160BT70REC AM29LV160BT70RECB AM29LV160BT70RSC AM29LV160BT120WCEB AM29LV160BT90SI AM29LV160BB80EC ADVANCEDMICRODEVICESINC-AM29LV160BB80EE AM29LV160BB90SEB AM29LV160BT90SEB AM29LV160BT90EC AM29LV160BT90ECB AM29LV160BT70REE AM29LV160BT70REI AM29LV160BB120EC AM29LV160BB120ECB AM29LV160B-1
|
Description |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 6800uF 100WV 20% *NO Pb* 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16mb(2M×81Mx16, 3V, CMOS引导扇区闪存 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48 VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
File Size |
364.60K /
48 Page |
View
it Online |
Download Datasheet |
|
|
|
Advanced Micro Devices, Inc. NXP Semiconductors N.V. ADVANCED MICRO DEVICES INC
|
Part No. |
AM29LV160DB-70ED AM29LV160DB-70FI AM29LV160DB-70SI AM29LV160DB-70WCD AM29LV160DB-90EF AM29LV160DB-70SC AM29LV160DB-120WCD AM29LV160DB-90WCD AM29LV160DT-120WCD AM29LV160DT-90WCD AM29LV160DB-70SF AM29LV160DT-70WCD AM29LV160DB-70EI AM29LV160DB-90EC AM29LV160DB-90EI AM29LV160DB-70EF AM29LV160DB-70FC AM29LV160DB-70EC AM29LV160DB-70SD AM29LV160DB-90ED AM29LV160DB-90SD AM29LV160DT-120WCI AM29LV160DB-70WCI AM29LV160DB-90WCI AM29LV160DT-90WCI AM29LV160DT-90SC AM29LV160DT-120SC AM29LV160DT-70EC AM29LV160DB-70WCF AM29LV160DB-90WCF AM29LV160DB-90FI AM29LV160DT-70SF AM29LV160DT-120FC AM29LV160DT-90SD AM29LV160DT-120WCF AM29LV160DT-90WCF AM29LV160DT-90ED AM29LV160DT-90EI
|
Description |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PDSO44 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16mb(2M×81Mx16, 3V, CMOS引导扇区闪存 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
File Size |
843.10K /
52 Page |
View
it Online |
Download Datasheet |
|
|
|
Golledge Electronics, Ltd. STMicroelectronics N.V.
|
Part No. |
BC213A BC214B BC214A BC213C BC158B BC158A BC147B BC157B BC149C BC157A BC147A BC159B
|
Description |
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:102; Package/Case:144-TQFP; Number of Circuits:1728; Mounting Type:surface mount Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:147; Package/Case:208-PQFP; Leaded Process Compatible:No; Number of Circuits:1728 Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:176; Package/Case:256-FBGA; Leaded Process Compatible:No; Number of Circuits:1728 Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:102; Package/Case:144-TQFP; Leaded Process Compatible:No; Number of Circuits:576 ; Temperature, operating range:-40(degree C) to (degree C); Base number:16; IC Generic RoHS Compliant: Yes ; Temperature, operating range:-40(degree C) to (degree C); Base number:1; IC Generic RoHS Compliant: Yes FPGA, FLEX 10K, 10K GATES, PQFP208; Logic IC family:FPGA; Logic IC Base Number:10; Logic IC function:EPF10K10; Voltage, supply:5.0V; Case style:PQFP MAX 3000A CPLD 128 MC 100-TQFP MAX 7000 CPLD 128 MC 100-PQFP Stratix II GX FPGA 60K FPGA-780 晶体管|晶体管|进步党| 20V的五(巴西)总裁| 100mA的我(丙 Stratix II FPGA 60K FBGA-672 晶体管|晶体管|叩| 45V的五(巴西)总裁| 100mA的我(丙 SERIAL CONFIG MEMORY, 16M, SOIC16; Memory type:FLASH; Memory size:16mb; Temp, op. min:-40(degree C); Temp, op. max:85(degree C); Case style:SOIC; Temperature, operating range:-40(degree C) to (degree C); Base number:16; IC Generic RoHS Compliant: Yes
|
File Size |
305.61K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
VICOR[Vicor Corporation] DC/DC变换 Vicor, Corp. Analog Devices, Inc. Maxim Integrated Products, Inc.
|
Part No. |
MI-J21-IA MI-J21-IZ MI-J21-MZ MI-J7N-IZ MI-J7N-MY MI-J2L-MY MI-J22-MA MI-J20-MA MI-J20-MY MI-J20-MZ MI-J2M-IA MI-J2M-IY MI-J2M-IZ MI-J2L-MA MI-J2L-MZ MI-J22-MY MI-J22-MZ MI-J51-MA MI-J51-MY MI-J51-MZ MI-J7Z-MZ MI-J00 MI-J20-IA MI-J20-IY MI-J20-IZ MI-J21-IY MI-J21-MA MI-J21-MY MI-J22-IA MI-J22-IY MI-J22-IZ MI-J23-IA MI-J23-IY MI-J23-IZ MI-J23-MA MI-J23-MY MI-J23-MZ MI-J24-IA MI-J24-IY MI-J24-IZ MI-J24-MA MI-J24-MY MI-J24-MZ MI-J2J-IA MI-J2J-IY MI-J2J-IZ MI-J2J-MA MI-J2J-MY MI-J2J-MZ MI-J2K-IA MI-J2K-IY MI-J2K-IZ MI-J2K-MA MI-J2K-MY MI-J2K-MZ MI-J2L-IA MI-J2L-IY MI-J2L-IZ MI-J2M-MA MI-J2M-MY MI-J2M-MZ MI-J2N-IA MI-J2N-IY MI-J2N-IZ MI-J2N-MA MI-J2N-MY MI-J2N-MZ MI-J2P-IA MI-J2P-IY MI-J2P-IZ MI-J2P-MA MI-J2P-MY MI-J2P-MZ MI-J2R-IA MI-J2R-IY MI-J2R-IZ MI-J2R-MA MI-J2R-MY MI-J2R-MZ MI-J2T-IA MI-J2T-IY MI-J2T-IZ MI-J2T-MA MI-J2T-MY MI-J2T-MZ MI-J2V-IA MI-J2V-IY MI-J2V-IZ MI-J2V-MA MI-J2V-MY MI-J2V-MZ MI-J2W-IA MI-J2W-IY MI-J2W-IZ MI-J2W-MA MI-J2W-MY MI-J2W-MZ MI-J2X-IA MI-J2X-IY MI-J2X-IZ MI-J2X-MA MI-J2X-MY MI-J2X-MZ MI-J2Y-IA MI-J2Y-IY MI-J2Y-IZ MI-J2Y-MA MI-J2Y-MY MI-J2Y-MZ MI-J2Z-IA MI-J2Z-IY MI-J2Z-IZ MI-J2Z-MA MI-J2Z-MY MI-J2Z-MZ MI-J50-IA MI-J50-IY MI-J50-IZ MI-J50-MA MI-J50-MY MI-
|
Description |
RES,Wirewound,2KOhms,65WV,5 /-% Tol GT 8C 8#16 SKT RECP WALL RESISTOR SILICONE 12 OHM 10W RESISTOR SILICONE 15 OHM 10W XCR3032XL-10VQG44I Flash 16mb PROM (ST Micro), Flash 32Mb PROM (ST Micro), Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.2V; Light Emitting Area:10 segments Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.0V; Light Emitting Area:10 segments Gate / Inverter Logic IC; Logic Type:Dual 4-Input NOR Gate; Logic Family:4000; Logic Base Number:4002; Package/Case:14-DIP BACKSHELL DB37 METALIZED PLASTIC Replaced by PTN78000A,PTN04050C : FLUKE-117 CALIBRATED BY NEWARK INONE SERVICES HVAC Digital Multimeter and Infrared Thermometer Combo Kit; RoHS Compliant: NA Bipolar Transistor; Collector Emitter Voltage, Vceo:800V; Transistor Polarity:NPN; Power Dissipation:70W; C-E Breakdown Voltage:1500V; DC Current Gain min (hfe):5; Collector Current:8A; Package/Case:3-TO-3PML RESISTOR WIREWOUND 390 OHM 10W RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:58, 58A, 58C, 141, 303, LMR195, Belden 7806A RoHS Compliant: Yes RESISTOR WIREWOUND 35 OHM 10W T-PNP-SI QUAD GEN PURPOSE T-NPN-SI-QUAD GEN PURP Amplifier, Other Bipolar Transistor; Current Rating:150mA; Voltage Rating:24V KPT 3C 3#20 SKT RECP D-SI 70PRV .1A Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4001; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole RoHS Compliant: Yes Darlington Bipolar Transistor; Mounting Type:Through Hole; Package/Case:TO-3; Current Rating:12A; Voltage Rating:100V RoHS Compliant: Yes Darlington Bipolar Transistor; Package/Case:TO-3; Mounting Type:Through Hole; Current Rating:12A; Voltage Rating:100V Thyristor; Current Rating:8A; Mounting Type:Through Hole; Package/Case:TO-64; Current, It av:8A; Repetitive Reverse Voltage Max, Vrrm:400V; Voltage Rating:400V Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:850V; DC Current Gain min (hfe):5; Collector Current:15A; Package/Case:TO-3; Voltage Rating:450V Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:N Channel; Power Dissipation:0.8W; C-E Breakdown Voltage:80V; DC Current Gain min (hfe):15; Collector Current:1A; Package/Case:TO-39 Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation:5W; C-E Breakdown Voltage:320V; DC Current Gain min (hfe):15; Collector Current:10A IC; Package/Case:12-lead quad in-line T-NPN-SI GEN PURP AMP Bipolar Transistor; Collector Emitter Voltage, Vceo:24V; Transistor Polarity:PNP; C-E Breakdown Voltage:12V; DC Current Gain min (hfe):110; Collector Current:100mA; Package/Case:TO-5; Current Rating:0.1A; Voltage Rating:24V T-PNP- GE-AF PREAMP-DR-PO RESISTOR WIREWOUND 5.6K OHM 3W Bipolar Transistor; Current Rating:1.5A; Voltage Rating:50V T-NPN-SI-AF DRIVER ; Transistor Polarity:N Channel; C-E Breakdown Voltage:140V; DC Current Gain min (hfe):20; Collector Current:12A; Package/Case:TO-3P; DC Current Gain Max (hfe):200; Mounting Type:Through Hole Single Digit Seven Segment Display; Number of Digits/Alpha:1; Digit/Alpha Height:7.62mm; Color:Red; Luminous Intensity (MSCP):500ucd LED-DISPLAY-RED RoHS Compliant: Yes Optoisolator; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:250mW; C-E Breakdown Voltage:60V; DC Current Gain min (hfe):50000; Collector Current:125mA; Package/Case:6-DIP RF Bipolar Transistor; Collector Emitter Voltage, Vceo:1V; Transistor Polarity:N Channel; Power Dissipation:5W; DC Current Gain min (hfe):25; Collector Current:400mA; DC Current Gain Max (hfe):200; Power (Ptot):5W JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current min, Idss:5mA; Zero Gate Voltage Drain Current Max, Idss:15mA; Gate-Source Cutoff Voltage Max, Vgs(off):-6V; Package/Case:TO-92 Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:1500Vrms; Package/Case:6-DIP; Mounting Type:Through Hole; C-E Breakdown Voltage:30V; DC Current Gain min (hfe):50; Transistor Polarity:NPN OPTOISOLATOR/DARL NPN-Output dc-Input Optocoupler,1-CHANNEL,3.5kV ISOLATION,DIP Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.05A; Mounting Type:Through Hole; Voltage Rating:30V; Transistor Polarity:NPN Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.5A; Mounting Type:Through Hole; C-E Breakdown Voltage:80V; DC Current Gain Max (hfe):3.5; Transistor Polarity:NPN Replaced by PTN04050C : Bipolar Transistor; Package/Case:TO-3P; Current Rating:10A; Voltage Rating:800V T-NPN-SI W/ 10K RESISTOR T-NPN-SI COLOR TV OUTPUT TVS UNI-DIR 64V 1500W SMC RF Bipolar Transistor; Collector Emitter Voltage, Vceo:300mV; Power Dissipation, Pd:0.3W; DC Current Gain min (hfe):350; C-E Breakdown Voltage:120V; Collector Current:100mA; DC Current Gain Max (hfe):700; Power (Ptot):300mW RoHS Compliant: Yes Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:NPN; Power Dissipation:800mW; C-E Breakdown Voltage:80V; DC Current Gain min (hfe):1000; Collector Current:1A; Package/Case:3-TO-92 T-NPN-SI HI SPEED SWITCH T-NPN SI- HI VLTG/SPEED Bipolar Transistor; Package/Case:TO-3P; Current Rating:6A; Voltage Rating:800V Bipolar Transistor; Current Rating:12A; Voltage Rating:400V Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:150W; DC Current Gain min (hfe):10; Collector Current:15A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:15A Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:125W; Collector Current:8A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:8A; Number of Cross References:81 SRAM Memory IC; Memory Type:MOS SRAM; Access Time, Tacc:55ns; Memory Configuration:4K x 1 Bipolar Transistor; Current Rating:4A; Voltage Rating:80V milirtary DC-CD Converters 10 to 50W TVS BIDIRECT 1500W 64V SMC TVS UNIDIRECT 1500W 7.0V SMC Military DC-DC Converters 10 to 50W 军事的DC - DC转换00W CAP/ 27P 3K K CF X9S 军事的DC - DC转换00W Military DC-DC Converters 10 to 50W 军事的DC - DC转换100W Military DC-DC Converters 10 to 50W 军事的DC - DC转换1050W IC; Mounting Type:Through Hole; Package/Case:9-SIP 军事的DC - DC转换00W Military DC-DC Converters 10 to 50W 军事DC - DC转换00W 32 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN 军事的DC - DC转换00W CONNECTOR ACCESSORY 军事的DC - DC转换00W FLUKE-116 CALIBRATED BY NEWARK INONE SERVICES RoHS Compliant: NA 军事的DC - DC转换00W Flash 16mb PROM (ST Micro) 军事的DC - DC转换00W Bipolar Transistor; Collector Emitter Voltage, Vceo:30V; Power Dissipation, Pd:625mW; DC Current Gain min (hfe):50; C-E Breakdown Voltage:30V; Collector Current:300mA; DC Current Gain Max (hfe):800; Power (Ptot):750mW 军事的DC - DC转换00W GT 8C 8#16 PIN RECP WALL 军事的DC - DC转换00W Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4011; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole 军事的DC - DC转换00W SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:8mA 军事的DC - DC转换00W Thyristor; Current Rating:10A; Mounting Type:Through Hole; Package/Case:TO-220; Current, It av:10A; Repetitive Reverse Voltage Max, Vrrm:600V; Voltage Rating:600V RoHS Compliant: Yes 军事的DC - DC转换00W
|
File Size |
83.54K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|