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  power amplifier silicon pnp Datasheet PDF File

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    AGILENT TECHNOLOGIES INC
Hewlett-Packard
Part No. MSA-3111 MSA-3186-BLKG
Description 0 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW power amplifier
(MSA-3111 / MSA-3186) Cascadable silicon Bipolar MMIC amplifier

File Size 93.25K  /  7 Page

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    USHA India LTD
Part No. 2SD313
Description NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.

File Size 46.01K  /  2 Page

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    2SD880Y

Usha India Ltd.
Part No. 2SD880Y
Description NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W.

File Size 46.65K  /  2 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SC3279 E000814 SC3279 2SC3269
Description silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM power amplifier APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM power amplifier APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM power amplifier APPLICATIONS)

File Size 149.60K  /  2 Page

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    INA-31063 INA-31063-TR1

Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
Part No. INA-31063 INA-31063-TR1
Description DC-2.5 GHz 3 V, High Isolation silicon RFIC amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏,高隔离硅射频放大器(直流.5 GHz3伏,高隔离硅射频集成电路放大器)
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW power amplifier

File Size 80.23K  /  11 Page

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    TOSHIBA
Part No. 2SA1425 2SA1425Y
Description TRANSISTOR | BJT | pnp | 120V V(BR)CEO | 800MA I(C) | SC-71
TRANSISTOR silicon pnp EPITAXIAL TYPE (PCT PROCESS) power amplifier, DRIVER STAGE amplifier APPLICATIONS

File Size 174.42K  /  3 Page

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    TOSHIBA
Part No. 2SA1899 2SA1899O
Description TRANSISTOR | BJT | pnp | 120V V(BR)CEO | 800MA I(C) | SC-71
TRANSISTOR silicon pnp EPITAXIAL TYPE (PCT PROCESS) power amplifier AND DRIVER STAGE amplifier APPLICATIONS

File Size 179.51K  /  4 Page

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    M68701H 68701H

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M68701H 68701H
Description From old datasheet system
silicon MOS FET power amplifier, 890-960MHz 6W FM /Digital Mobile
silicon MOS FET power amplifier / 890-960MHz 6W FM /Digital Mobile

File Size 119.52K  /  3 Page

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    Panasonic
Part No. PUB4512
Description power Transistor Arrays - silicon NPN Epitaxial Planar Type - power amplifier Switching - Complementary Pair with PU3112, PU4112, PU4412

File Size 255.21K  /  3 Page

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    2SK30ATM

Toshiba Semiconductor
Part No. 2SK30ATM
Description silicon N Channel Junction Type Low Noise Pre-amplifier, Tone Control amplifier and DC-AC High Input Impedance amplifier Circuit Applications

File Size 596.56K  /  4 Page

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