... h o t tk y - 6 A VDD 450 125nS r e p e titi o n r a te :1 0 0 H z
50 u
16Vz500m W
M ic 4 4 5 2 b M
450
5 0 O h m s p ro b e
...g A N D T O L E r A N C IN g P E r A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T r O L L IN g D IM E N S...
Description
Si, SMALL SIgNAL, FET, MS-012AA<br>N-Channel Application-Specific MOSFETs<br>
... current applications
HEXFET(r) Chipset for DC-DC Converters
S S S g
1 8 7
A A D D D D
2
Description These new devices employ advanced HEXFET(r) Power MOSFET technology to achieve an unprecedented balance of on-resistance and ...
Description
PrOVISIONAL DATASHEET<br>Chipset for DC-DC Converters<br>30V Single N-Channel HEXFET Power MOSFET in a SO-8 package<br>
r) Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching
l
VDSS
500V...g integral reverse --- --- 32 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VgS = 0V ---...
r) Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching benefits Low...g DS
Absolute Maximum ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VgS dv/dt...
Description
Power MOSFET(Vdss=500V/ rds(on)max=0.85ohm/ Id=8.0A)<br>Power MOSFET(Vdss=500V, rds(on)max=0.85ohm, Id=8.0A)<br>Power MOSFET(Vdss=500V rds(on)max=0.85ohm Id=8.0A)<br>
r) Power MOSFET
l l l l l l
Ultra Low gate Charge reduced gate Drive requirement Enhanced 30V VgS rating reduced CISS, COSS, CrSS Extrem...g S
rDS(on) = 0.85 ID = 8.0A
Description
This new series of low charge HEXFET(r) power MOSFET...
...al resistance
Parameter
rthJC r thJA Junction to Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 1.67 30
C/W
Test Conditions
Soldered to a 2" square copper-clad board
For footnotes refer to the last page
2
www.irf...
r) Power MOSFET
8 7
generation V Technology Ultra Low On-resistance N-Channel MOSFET Surface Mount Very Low gate Charge and Switching Losses Fully Avalanche rated
S S S g
1 2
A A D D D D
VDSS = 30V
3
6
4
5
rDS...
r) Power MOSFET
Advanced Process Technology Surface Mount (IrF9520S) l Low-profile through-hole (IrF9520L) l 175C Operating Temperature l F...g
ID = -6.8A
S
Fifth generation HEXFETs from International rectifier utilize advanced process...
Description
Power MOSFET(Vdss=-100V/ rds(on)=0.48ohm/ Id=-6.8A)<br>Power MOSFET(Vdss=-100V, rds(on)=0.48ohm, Id=-6.8A)<br>Power MOSFET(Vdss=-100V rds(on)=0.48ohm Id=-6.8A)<br>
r) Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche rated
D
VDSS = -100V
g S
rDS(on) = 0.48 ID = -6.8A
Description
Fifth generati...
Description
Power MOSFET(Vdss=-100V rds(on)=0.48ohm Id=-6.8A)<br>Power MOSFET(Vdss=-100V, rds(on)=0.48ohm, Id=-6.8A)<br>
r) Power MOSFET
Advanced Process Technology Surface Mount (IrF9530NS) l Low-profile through-hole (IrF9530NL) l 175C Operating Temperature l...g
ID = -14A
S
Fifth generation HEXFETs from International rectifier utilize advanced processi...
Description
Power MOSFET(Vdss=-100V/ rds(on)=0.20ohm/ Id=-14A)<br>Power MOSFET(Vdss=-100V, rds(on)=0.20ohm, Id=-14A)<br>