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For revolutionary Found Datasheets File :: 119+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 |

				Austin Semiconductor, Inc
Part No.	AS5LC1008DCJ-12/IT AS5LC1008DCJ-12/XT AS5LC1008DJ-12/XT AS5LC1008DJ-10/XT AS5LC1008DCJ-10/XT AS5LC1008DCJ-10/IT AS5LC1008DJ-10/IT AS5LC1008DCJ-20/IT AS5LC1008DCJ-15/IT AS5LC1008DJ-12/IT AS5LC1008DJ-15/IT AS5LC1008DJ-20/IT AS5LC1008DCJ-15/XT AS5LC1008DJ-20/XT AS5LC1008DCJ-20/XT
Description	128K x 8 SRAM High-Speed CMOS SRAM with 3.3V revolutionary Pinout
File Size	112.40K / 10 Page	View it Online	Download Datasheet

				AUSTIN[Austin Semiconductor]
Part No.	AS5LC1008DJ-20_XT AS5LC1008 AS5LC1008DCJ-10_IT AS5LC1008DCJ-10_XT AS5LC1008DCJ-12_IT AS5LC1008DCJ-12_XT AS5LC1008DCJ-15_IT AS5LC1008DCJ-15_XT AS5LC1008DCJ-20_IT AS5LC1008DCJ-20_XT AS5LC1008DJ-10_IT AS5LC1008DJ-10_XT AS5LC1008DJ-12_IT AS5LC1008DJ-12_XT AS5LC1008DJ-15_IT AS5LC1008DJ-15_XT AS5LC1008DJ-20_IT AS5LC1008DCJ-10/IT AS5LC1008DJ-10/IT AS5LC1008DCJ-10/XT AS5LC1008DJ-10/XT AS5LC1008DCJ-12/IT AS5LC1008DCJ-12/XT AS5LC1008DCJ-15/IT AS5LC1008DCJ-15/XT AS5LC1008DJ-12/IT AS5LC1008DJ-12/XT AS5LC1008DJ-15/XT
Description	128K x 8 SRAM High-Speed CMOS SRAM with 3.3V revolutionary Pinout
File Size	111.83K / 10 Page	View it Online	Download Datasheet

				Austin Semiconductor
Part No.	AS5LC1008DJ-10_IT AS5LC1008DJ-10_XT AS5LC1008DJ-12_IT AS5LC1008DJ-12_XT AS5LC1008DCJ-10_IT AS5LC1008DCJ-10_XT AS5LC1008DCJ-12_IT AS5LC1008DCJ-12_XT AS5LC1008DCJ-20_IT AS5LC1008DCJ-20_XT AS5LC1008DJ-20_IT AS5LC1008DJ-20_XT AS5LC1008DJ-15_IT AS5LC1008DJ-15_XT AS5LC1008DCJ-15_IT AS5LC1008DCJ-15_XT AS5LC100805
Description	128K x 8 SRAM High-Speed CMOS SRAM with 3.3V revolutionary Pinout
File Size	519.31K / 10 Page	View it Online	Download Datasheet

				ETC AUSTIN[Austin Semiconductor]
Part No.	AS5C512K8F-15 AS5C512K8F-15L_883C AS5C512K8F-17 AS5C512K8F-17_H AS5C512K8F-20 AS5C512K8F-20L_H AS5C512K8F-25L_883C AS5C512K8F-25L_H AS5C512K8F-35L_883C AS5C512K8F-45L_883C AS5C512K8F-55_H AS5C512K8F-15_883C AS5C512K8F-17L_H AS5C512K8F-20_883C AS5C512K8F-20_H AS5C512K8F-20L_883C AS5C512K8F-25 AS5C512K8F-25_883C AS5C512K8F-25_H AS5C512K8F-30 AS5C512K8F-35_883C AS5C512K8F-35_H AS5C512K8F-35L_H AS5C512K8F-45 AS5C512K8F-45_883C AS5C512K8F-45_H AS5C512K8F-45L_H AS5C512K8F-55L_H AS5C512K8ECJ-55L_H AS5C512K8 AS5C512K8DJ AS5C512K8DJ-20L_XT AS5C512K8EC AS5C512K8EC-15_883C AS5C512K8EC-15L_883C AS5C512K8EC-17_H AS5C512K8EC-17L_H AS5C512K8EC-20_883C AS5C512K8EC-20_H AS5C512K8EC-20L_883C AS5C512K8EC-20L_H AS5C512K8EC-25_883C AS5C512K8EC-25_H AS5C512K8EC-25L_883C AS5C512K8EC-25L_H AS5C512K8EC-35_883C AS5C512K8EC-35_H AS5C512K8EC-35L_883C AS5C512K8EC-35L_H AS5C512K8EC-35LE_XT AS5C512K8EC-45_883C AS5C512K8EC-45_H AS5C512K8EC-45L_883C AS5C512K8EC-45L_H AS5C512K8EC-55_H AS5C512K8EC-55L_H AS5C512K8ECJ AS5C512K8ECJ-15 AS5C512K8ECJ-17 AS5C512K8ECJ-17_H AS5C512K8ECJ-17L_H AS5C512K8ECJ-20 AS5C512K8ECJ-20_H AS5C512K8ECJ-20L_H AS5C512K8ECJ-25 AS5C512K8ECJ-25_H AS5C512K8ECJ-25L_H AS5C512K8ECJ-30 AS5C512K8ECJ
Description	512K x 8 SRAM HIGH SPEED SRAM with revolutionary PINOUT
File Size	400.28K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP04N50C3 SPP04N50C309 SPA04N50C3
Description	New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 4.5 A, 500 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	627.71K / 13 Page	View it Online	Download Datasheet

				http:// SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM681002B-12 KM681002B-8 KM681002BI-12 KM681002BI-8 KM681002BJ-12 KM681002BJ-8 KM681002BJI-12 KM681002BJI-8 KM681002BT-12 KM681002B KM681002B-10 KM681002BI-10 KM681002BJ-10 KM681002BJI-10 KM681002BT-10 KM681002BT-8 KM681002BTI-10 KM681002BTI-12 KM681002BTI-8
Description	128Kx8 Bit High Speed Static RAM(5V Operating), revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. 128Kx8位高速静态RAMV的工作），革命销出。在经营商业和工业温度范围
File Size	170.79K / 8 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc.
Part No.	IS63LV1024-8KL IS63LV1024L-10HL IS63LV1024L-10KLI IS63LV1024L-10TLI
Description	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V revolutionary PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32
File Size	313.08K / 18 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD04N80C3 SPD04N80C308
Description	4 A, 800 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA CoolMOSTM Power Transistor Features New revolutionary high voltage technology
File Size	439.03K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
Description	128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
File Size	167.22K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R1008V1B-I8 K6R1008V1B-B-P K6R1008V1B-C-L K6R1008V1B-C12 K6R1008V1B-I-P K6R1008V1B-I10 K6R1008V1B-I12 K6R1008V1B K6R1008V1B-TP10
Description	128K X 8 STANDARD SRAM, 10 ns, PDSO32 128Kx8 Bit High Speed Static RAM(3.3V Operating), revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作），革命销出。在商用和工业温度范围运
File Size	183.33K / 9 Page	View it Online	Download Datasheet

For revolutionary Found Datasheets File :: 119+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 |