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ST6220C OP27FZ P6KE36CA 594X6 ST92164 2SD2012 P6KE36CA P6SMB47
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    AON7458

Alpha & Omega Semiconductors
Part No. AON7458
OCR Text ...dynamic parameters turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =125v, i d =1.5a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge turn-on delaytime gate source charge drain-source breakdo...
Description 250V,5A N-Channel MOSFET

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ...ge Transition frequency Turn-on time Storage time Fill time (Ta=25C) Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 300mA*1 IC = 100mA, IB = ...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1....
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time *V CEO(sus) (TC=25C) Symbol ICBO IEBO VCEO(sus)* hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5036 2SC5036A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5036 2SC5036A
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time 2SC5036 2SC5036A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.72K  /  3 Page

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    2SC5037 2SC5037A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5037 2SC5037A
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time 2SC5037A 2SC5037A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0...
Description Silicon NPN triple diffusion planar type

File Size 62.18K  /  3 Page

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    2SC5060 2SC5060TV2M

Rohm CO.,LTD.
Part No. 2SC5060 2SC5060TV2M
OCR Text ...ency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Min. 80 80 - - 1000 - - - - - - - Typ. - - - - - - - 80 20 0.2 5 0.6 Max. 100 100 10 3 2500 1.5 2 - - - - - Un...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text ...ge Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0....
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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