...2 IC = -500mA, IB = -50mA*2 150 15
*2
min
typ
max -100 -1
-25 -20 -7 90 25 - 0.4 -1.2 220
4.10.2
4.50.1
7
Unit nA A V V V
V V MHz
VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz
25
pF
P...
...m
s Features
q q q
0.650.15
+0.25 1.5 -0.05
0.650.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collect...20 -10
120
Collector current IC (mA)
-12
-80
-60
80
-2mA
-40
40
-1mA
...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
... -- Typ -- -- -- -- -- -- -- -- 15 Max -- -- -- -1 320 -- -1 -1 -- V V MHz Unit V V V A Test conditions I C = -10 A, IE = 0 I C = -50 mA, RB...20 -50 -100 Collector to emitter Voltage VCE (V) (-10 V, -4 A) D C O pe ra tio (-20 V, -2 A) n
(-6 ...
...
Area of Safe Operation
(-15 V, -2 A)
O pe
20
ra tio
TC
10
(-60 V, -0.4 A)
n (T C = 25 ) C
1.8 W
0
Ta
150 100 50 Ambient temperature Ta (C) Case temperature TC (C)
2
2SB861
Typical Output Characteri...
...atures
q q
+0.3 +0.2
2.540.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter t...20 -7 -10 -5 1 150 -55 ~ +150 Unit V V V A A W C C
0.45-0.1 1.27 1.27
13.50.5
0.7-0.2
Low ...
Description
Silicon PNP epitaxial planer type(For low-frequency power amplification)
...ssipation PC (W)
35 30 25 20 15 10 5 (3) 0 0 20 40
Collector current IC (A)
IB=-100mA -4 -80mA -60mA -3 -40mA -30mA -20mA
Collector current IC (A)
(1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W...
Description
Silicon PNP epitaxial planar type(For power amplification)