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NXP Semiconductors N.V.
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Part No. |
BYR29X-800
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OCR Text |
...se recovery time i f =1a; v r =30v; di f /dt = 100 a/s; t j =25c; see figure 8 ; see figure 7 - 6075ns
byr29x-800 all information pro...8a i frm repetitive peak forward current square-wave pulse; =0.5; t p = 25 s; t h 73 c -16a i fs... |
Description |
Ultrafast power diode 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220
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File Size |
124.10K /
12 Page |
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it Online |
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Electronic Theatre Controls, Inc.
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Part No. |
JL124SDA
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OCR Text |
...vio input offset voltage vcc+ = 30v, vcc- = gnd, vcm = -15v -5 5 mv 1 -7 7 mv 2, 3 vcc+ = 2v, vcc- = -28v, vcm = 13v -5 5 mv 1 -7 7 mv 2, 3 ...8a, 8b tr(os) transient response: overshoot +vcc = 30v, -vcc = gnd 50 % 7, 8a, 8b sr+ slew rate: ris... |
Description |
OP-AMP|QUAD|BIPOLAR|FP|14PIN|CERAMIC 运放|四|双极|计划生育| 14PIN |陶瓷
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File Size |
197.88K /
16 Page |
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it Online |
Download Datasheet |
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ZETEX[Zetex Semiconductors]
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Part No. |
ZXMN6A07Z_07 ZXMN6A07Z ZXMN6A07ZTA
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OCR Text |
...1.3 0.95
ns ns ns ns
VDD= 30v, VGS= 10V ID= 1.8a RG 6.0
VDS= 30v, VGS= 5V ID= 1.8a nC nC nC V ns nC Tj=25C, IS= 0.45A, VGS=0V Tj=25C, IF= 1.8a, di/dt=100A/ s VDS= 30v, VGS= 10V ID= 1.8a
NOTES: (*) Measured under pulsed conditio... |
Description |
60V SOT89 N-channel enhancement mode mosfet
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File Size |
457.55K /
8 Page |
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it Online |
Download Datasheet |
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Sanyo Semicon Device
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Part No. |
2SK4063LS
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OCR Text |
...mA, VGS=0V VDS=500V, VGS=0V VGS=30v, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8a ID=8a, VGS=15V VDS=30v, f=1MHz VDS=30v, f=1MHz VDS=30v, f=1MHz VDS=5V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See... |
Description |
N-Channel Silicon MOSFET General-Purpose Switching Device
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File Size |
51.13K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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