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Alpha & Omega Semicondu...
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Part No. |
AON7408
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OCR Text |
30v n-channel mosfet features v ds (v) = 30v i d = 23a (v gs = 10v) r ds(on) < 20m w (v gs = 10v) r ds(on) < 32m w (v gs = ...25 40 62 75 r q jc 6.2 7.5 c/w thermal characteristics parameter units maximum junction-to-ambient ... |
Description |
30V N-Channel MOSFET
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File Size |
233.95K /
4 Page |
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it Online |
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Wooseek Tech Corp ETC[ETC]
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Part No. |
WSL324RZ WSL324PZ
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OCR Text |
...ltage
VIO
VO=1.4V VCC=5.0~30V RS=0 ,VICM=0V to VCC-1.7V 7.0
9.0
/
VIO/ T RS=0 ,VCC=30V IIO IIB VICR ICC AVOL VOH VOL CMR PS...25
VIDR
VCC*
V
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
... |
Description |
LOW POWER QUAD OPERATIONAL AMPLIFIER
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File Size |
236.30K /
4 Page |
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it Online |
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WEITRON[Weitron Technology]
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Part No. |
WT2310
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OCR Text |
...tching
Turn-on Delay Time2 VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Turn-off Delay Time VDS=30V,VGS=...25 26
1.2 -
V ns nC
Reverse Recovery Time VGS=0V,IS=3A, dl/dt=100A/s Reverse Recovery Charg... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
617.40K /
6 Page |
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it Online |
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WEITRON[Weitron Technology]
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Part No. |
WTD9575
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OCR Text |
...ching
Turn-on Delay Time2 VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Rise Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Turn-off Delay Time VDS=-...25 20 15 10 5 0
0
-4.5V
ID ,Drain Current (A)
TC =25C
-5.0V
30 25 20 15 10 5
TC =... |
Description |
Surface Mount P-Channel Enhancement Mode POWER MOSFET
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File Size |
398.20K /
6 Page |
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it Online |
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![2SJ400](Maker_logo/sanyo_semicon_device.GIF)
SANYO[Sanyo Semicon Device]
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Part No. |
2SJ400
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OCR Text |
...-1mA, VGS=0 IG=100A, VDS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-18A ID=-18A, VGS=-10V ID=-18A, VGS=-4V VDS=-10V, f...25 C 75 C
--60
.5 --4
V
--60
Drain Current, ID - A
--50
Drain Current, ID - A
... |
Description |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
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File Size |
41.78K /
4 Page |
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it Online |
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WEITRON[Weitron Technology]
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Part No. |
WTD9973
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OCR Text |
...tching
Turn-on Delay Time2 VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Turn-off Delay Time VDS=30V,VG...25 20 15 10 5 0
0
ID ,Drain Current (A)
TC =25C
10V 7.0V 5.0V 4.5V
28 24 20 16 12 8 4 0... |
Description |
Surface Mount N-Channel Enhancement Mode POWER MOSFET
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File Size |
338.61K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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