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  30v.25 Datasheet PDF File

For 30v.25 Found Datasheets File :: 33660    Search Time::1.235ms    
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    AP2331GN-HF AP2331GN-HF14

Advanced Power Electronics Corp.
Part No. AP2331GN-HF AP2331GN-HF14
OCR Text ... q gs gate-source charge v ds =-30v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 1.5 - nc t d(on) turn-on delay time v ds =-30v ...25 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 0 0.4 0.8 1.2 1.6 2 0123456 -v ds , drain-to-source volta...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement, Small Package Outline, Surface Mount Device

File Size 56.07K  /  4 Page

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    Alpha & Omega Semicondu...
Part No. AON7408
OCR Text 30v n-channel mosfet features v ds (v) = 30v i d = 23a (v gs = 10v) r ds(on) < 20m w (v gs = 10v) r ds(on) < 32m w (v gs = ...25 40 62 75 r q jc 6.2 7.5 c/w thermal characteristics parameter units maximum junction-to-ambient ...
Description 30V N-Channel MOSFET

File Size 233.95K  /  4 Page

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    Wooseek Tech Corp
ETC[ETC]
Part No. WSL324RZ WSL324PZ
OCR Text ...ltage VIO VO=1.4V VCC=5.0~30V RS=0 ,VICM=0V to VCC-1.7V 7.0 9.0 / VIO/ T RS=0 ,VCC=30V IIO IIB VICR ICC AVOL VOH VOL CMR PS...25 VIDR VCC* V JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. ...
Description LOW POWER QUAD OPERATIONAL AMPLIFIER

File Size 236.30K  /  4 Page

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    WEITRON[Weitron Technology]
Part No. WT2310
OCR Text ...tching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=1A,RD=30,RG=3.3 Turn-off Delay Time VDS=30V,VGS=...25 26 1.2 - V ns nC Reverse Recovery Time VGS=0V,IS=3A, dl/dt=100A/s Reverse Recovery Charg...
Description N-Channel Enhancement Mode Power MOSFET

File Size 617.40K  /  6 Page

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    MTN007N03LS3

Cystech Electonics Corp.
Part No. MTN007N03LS3
OCR Text ...3 cystek product specification 30v n-channel enhancement mode mosfet mtn007n03ls3 bv dss 30v i d 780ma r dson @v gs =4.5v, i d =4...25 c) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage ...
Description 30V N-Channel Enhancement Mode MOSFET

File Size 266.40K  /  9 Page

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    WEITRON[Weitron Technology]
Part No. WTD9575
OCR Text ...ching Turn-on Delay Time2 VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Rise Time VDS=-30V,VGS=-10V,ID=-9A,RD=3.3,RG=3.3 Turn-off Delay Time VDS=-...25 20 15 10 5 0 0 -4.5V ID ,Drain Current (A) TC =25C -5.0V 30 25 20 15 10 5 TC =...
Description Surface Mount P-Channel Enhancement Mode POWER MOSFET

File Size 398.20K  /  6 Page

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    2SJ400

SANYO[Sanyo Semicon Device]
Part No. 2SJ400
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-18A ID=-18A, VGS=-10V ID=-18A, VGS=-4V VDS=-10V, f...25 C 75 C --60 .5 --4 V --60 Drain Current, ID - A --50 Drain Current, ID - A ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.78K  /  4 Page

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    WEITRON[Weitron Technology]
Part No. WTD9973
OCR Text ...tching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Rise Time VDS=30V,VGS=10V,ID=9A,RD=3.3,RG=3.3 Turn-off Delay Time VDS=30V,VG...25 20 15 10 5 0 0 ID ,Drain Current (A) TC =25C 10V 7.0V 5.0V 4.5V 28 24 20 16 12 8 4 0...
Description Surface Mount N-Channel Enhancement Mode POWER MOSFET

File Size 338.61K  /  6 Page

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    AO4932

Alpha & Omega Semiconductors
Part No. AO4932
OCR Text ...s). Features FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8m RDS(ON) < 19.6m FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8m (VGS = 10V) <23m (...25.2 19.6 mA A V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg O...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 144.14K  /  8 Page

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    TSM4435BCSRL TSM4435BCSRLG

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
Part No. TSM4435BCSRL TSM4435BCSRLG
OCR Text 30v p-channel mosfet 1/6 ...25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v...
Description 30V P-Channel MOSFET
   30V P-Channel MOSFET

File Size 180.92K  /  6 Page

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