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Shenzhen Huazhimei Semi...
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| Part No. |
HM20N15D
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| OCR Text |
design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. general features v ds =150v,i d =20a r ds(on) < 45m ? @ v gs =10v (typ:35m ? ) high density cell design for ultr... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
555.56K /
7 Page |
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it Online |
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Shenzhen Huazhimei Semi...
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| Part No. |
HM20N06KA
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| OCR Text |
design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. general features v ds =60v,i d =20a r ds(on) <35m ? @ v gs =10v r ds(on) <40m ? @ v gs =4.5v high density cell... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
539.67K /
7 Page |
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it Online |
Download Datasheet |
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Renesas Electronics Corporation
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| Part No. |
CA3083
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| OCR Text |
...aximum flexibility in circui t design . features ? high i c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ma (max) ?low v ce sat (at 50ma). . . . . . . . . . . . . . . . . . . 0.7v (max) ? matched pair (q 1 and q 2 ) -v i... |
| Description |
General Purpose High Current NPN Transistor Array
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| File Size |
290.83K /
4 Page |
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it Online |
Download Datasheet |
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White Electronic Design...
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| Part No. |
WS1M8-45FC WS1M8-45FI
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| OCR Text |
...this parameter is guaranteed by design but not tested. dc characteristics v cc = 5.0v, v ss = 0v, -55c t a +125c parameter sym conditions min max units input leakage current i li v cc = 5.5, v in = gnd to v cc 10 a output leakage cur... |
| Description |
2x512Kx8 DUALITHICTM SRAM
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| File Size |
359.19K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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