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SS400 4739A IRFS4 MAX2420 TLP270M 2SD143 SK104 D882Q
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    PESD5V0F1BSF PESD5V0F1BSF-15

NXP Semiconductors
Part No. PESD5V0F1BSF PESD5V0F1BSF-15
Description extremely low capacitance bidirectional ESD protection diode

File Size 353.65K  /  12 Page

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    TY Semiconductor Co., Ltd
Part No. CES2321
Description High dense cell design for extremely low RDS(ON).

File Size 216.48K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CES2313
Description High dense cell design for extremely low RDS(ON).

File Size 223.01K  /  2 Page

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    PMGD290XN

NXP Semiconductors
Part No. PMGD290XN
Description Dual N-channel mTrenchMOS extremely low level FET

File Size 116.60K  /  12 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F457 Q62702-F456
Description extremely LOW NOISE NPN SILICON BROADBAND TRANSISTORS

File Size 104.66K  /  5 Page

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    TY Semiconductor Co., Ltd
Part No. CES2307
Description High dense cell design for extremely low RDS(ON)

File Size 275.09K  /  2 Page

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    AUK, Corp.
AUK[AUK corp]
Part No. DP030S
Description extremely low collector-to-emitter saturation voltage 极低的集电极到发射极饱和电压

File Size 71.51K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CES2314
Description High dense cell design for extremely low RDS(ON).

File Size 53.65K  /  2 Page

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    CZT2000

Guangdong Kexin Industrial Co.,Ltd
Part No. CZT2000
Description PNP Silicon extremely High Voltage Darlington Transistor

File Size 30.78K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. CES2312
Description High dense cell design for extremely low RDS(ON).

File Size 304.44K  /  2 Page

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