igbt
Package
JEDEC MO-093AA (5 LEAD TO-218)
5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO CONNECTION 1 GATE
Features
...mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage...
...ely between 25oC and 150oC. The igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for soleno...
igbt with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE
Features
* 12...mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage...
Description
12A/ 600V N-Channel igbt with Anti-Parallel Ultrafast Diode 12A, 600V N-Channel igbt with Anti-Parallel Ultrafast Diode
igbt
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
* 32A, 600V * Latch Free Operation * Typical Fall Time - 600ns * High...mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage...
...E C
Short Circuit Rated Fast igbt
VCES = 600V VCE(typ) 2.0V
@VGE = 15V, I C = 24A
n-channel
Description
Insulated Gate Bipolar ...mosfet. They provide substantial benefits to a host of high-voltage, highcurrent applications. These...
... curve
G E C
Standard Speed igbt
VCES = 600V VCE(sat) 1.8V
@VGE = 15V, IC = 31A
n-channel
Description
Insulated Gate Bipolar T...mosfet. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO...
...uency curve
G E C
UltraFast igbt
VCES = 600V VCE(sat) 3.0V
@VGE = 15V, I C = 20A
n-channel
Description
Insulated Gate Bipolar ...mosfet. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO...
...ency curve
G E C
Fast Speed igbt
VCES = 600V VCE(sat) 2.0V
@VGE = 15V, IC = 27A
n-channel
Description
Insulated Gate Bipolar T...mosfet. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO...
...ferenced N Channel Power MOS or igbt. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMO...mosfet normally used to hold the pin low.
2/9
L6385
RECOMMENDED OPERATING CONDITIONS
Symbol ...
...e, high speed, power mosfet and igbt driver with dependent high and low side referenced output channels designed for half- bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. L...
Description
From old datasheet system HALF-RIDGE DRIVER HALF-BRIDGE DRIVER