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ALLIANCE SEMICONDUCTOR CORP
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Part No. |
AS7C33256NTD18A-183TQC
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OCR Text |
...iently by introducing a wr ite 'latency' which matches the two (one)cycle pipeline (flowth rough) read latency. write data is applied two cycles after the write co mmand and address, allowing the re ad pipeline to clear. with n td ? , write... |
Description |
256K X 18 ZBT SRAM, 9 ns, PQFP100
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File Size |
235.40K /
10 Page |
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Spansion Inc. Spansion, Inc.
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Part No. |
DL324 DL323 DL322 AM29DL323GB120EF AM29DL323GT120EF AM29DL324GT120EF AM29DL324GB120EF AM29DL324GB30EF AM29DL324GB30EFN AM29DL324GB40EF AM29DL324GB40EFN AM29DL324GB70EF AM29DL324GB90EF AM29DL324GT30EF AM29DL324GT30EFN AM29DL324GT40EF AM29DL324GT40EFN AM29DL324GT70EF AM29DL324GT90EF AM29DL324GB30PCF AM29DL324GB30PCFN AM29DL324GB30PCI AM29DL324GB40PCF AM29DL324GB30PCIN AM29DL323GB120WMIN AM29DL323GB70WMI AM29DL322GB70WMI AM29DL322GB120EF AM29DL324GB120WMF AM29DL324GB30EI AM29DL324GB30EIN D323GT90UI D324GB90UI D324GB90UF AM29DL323GB120WMF AM29DL323GT120EI AM29DL323GT120WMIN AM29DL323GT30EI AM29DL324GB70WMIN AM29DL323GB30EFN AM29DL323GB30PCFN AM29DL323GB30EIN AM29DL324GT30WDIN AM29DL322GB120WMI AM29DL322GB120WMF AM29DL324GT90EI AM29DL322GB70EF AM29DL324GB40PCIN AM29DL322GB40PCF AM29DL322GT40EFN AM29DL322GT40WDF
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OCR Text |
...functions in other bank -- Zero latency between read and write operations Multiple bank architectures -- Three devices available with different bank sizes (refer to Table 3) 256-byte Secured Silicon Sector -- Factory locked and identifiab... |
Description |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 120 ns, PBGA48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位4个M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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File Size |
874.73K /
58 Page |
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it Online |
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Spansion Inc. Spansion, Inc.
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Part No. |
DS324 DS322 DS323 AM29DS322T120EE AM29DS322T120EEN AM29DS322B70EI AM29DS322B70EIN
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OCR Text |
...functions in other bank -- Zero latency between read and write operations Multiple bank architectures -- Three devices available with different bank sizes (refer to Table 3) 256-byte SecSi (Secured Silicon) Sector -- Factory locked and id... |
Description |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory 32兆位个M × 8 2米x 16位).8伏的CMOS只,同时作业快闪记忆 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory 32兆位4个M × 8 2米x 16位).8伏的CMOS只,同时作业快闪记忆
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File Size |
603.46K /
52 Page |
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it Online |
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NANYA TECHNOLOGY CORP
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Part No. |
NT5DS16M16BS-6KL
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OCR Text |
...burst lengths: 2, 4, or 8 cas latency: 2.5 auto precharge option for each burst access auto refresh and self refresh modes 7.8 s maximum average periodic refresh interval 2.5v (sstl_2 compatible) i/o v ddq = 2.5v 0.2v v dd ... |
Description |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
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File Size |
2,290.92K /
80 Page |
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it Online |
Download Datasheet |
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Price and Availability
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