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				Analog Devices, Inc. AD[Analog Devices]
Part No.	BLC6G20LS-140 BLC6G20-140
OCR Text	objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 C in a comm...
Description	UHF power LDMOS transistor
File Size	43.33K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BLC6G20LS-75 BLC6G20-75
OCR Text	objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 C in a commo...
Description	UHF power LDMOS transistor
File Size	43.02K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLC6G22LS-130 BLC6G22-100 BLC6G22-130 BLC6G22LS-100
OCR Text	objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 C in a comm...
Description	UHF power LDMOS transistor
File Size	43.20K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	CLF1G0035S-50 CLF1G0035-50
OCR Text	...n hemt rev. 2 ? 29 january 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 150 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (m...
Description	Broadband RF power GaN HEMT
File Size	315.06K / 19 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	CLF1G0035S-100 CLF1G0035-100
OCR Text	...n hemt rev. 2 ? 29 january 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 300 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (m...
Description	Broadband RF power GaN HEMT
File Size	299.68K / 20 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF1043
OCR Text	objective specification Supersedes data of 2000 Feb 17 2000 Feb 23 Philips Semiconductors objective specification UHF power LDMOS transistor FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on mounti...
Description	UHF power LDMOS transistor
File Size	52.53K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF6G20-45
OCR Text	objective data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 C in a commo...
Description	UHF power LDMOS transistor
File Size	37.59K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BSH104
OCR Text	objective specification File under Discrete Semiconductors, SC13b 1997 Nov 26 Philips Semiconductors objective specification N-channel enhancement mode MOS transistor FEATURES * High-speed switching * No secondary breakdown * Dire...
Description	N-channel enhancement mode MOS transistor
File Size	47.38K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BSH299
OCR Text	objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors objective specification P-channel enhancement mode MOS transistor FEATURES * Low threshold voltage * High-speed switching * No se...
Description	P-channel enhancement mode MOS transistor
File Size	92.99K / 12 Page	View it Online	Download Datasheet

For objective Found Datasheets File :: 8900 Search Time::5.828ms
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