...RSION CONTACT SALES OFFICE IPAK to-251 (Suffix "-1")
3 2 1
1 3
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The n...
Description
N-CHANNEL 250V - 1.7 OHM - 2A - IPAK/DPAK POWERMESH MOSFET N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET From old datasheet system
...OR ORDERING IN TAPE & REEL IPAK to-251 (Suffix "-1")
3 2 1
1 3
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The n...
Description
From old datasheet system N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET N-CHANNEL 400V - 3.5 OHM - 2A - IPAK/DPAK POWERMESH MOSFET
...00 30 1 0.63 4 40 0.32 3.5 -65 to 150 150
(1)ISD 1A, di/dt 200A/s, VDD V (BR)DSS, T j T JMAX.
Unit V V V A A A W W/C V/ns C C 1/10
...251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4...
Description
N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh MOSFET N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh⑩ MOSFET
...UPPLIES AND MOTOR DRIVE
IPAK to-251 (Suffix "-1")
DPAK to-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (*) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate V...
...N TAPE & REEL (2500 UNITS) IPAK to-251 (Suffix "-1")
3 2 1
1 3
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The n...
Description
From old datasheet system N-CHANNEL MOSFET N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | to-252AA 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 1.9AI(四)|52AA
to-251/to-252 PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE ST D3NC50
s s s s s s
V DSS 500 V
R DS(on) < 2.7
ID 3A
TYPICAL RDS(on) = 2.4 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CH...
...00 30 3.2 2 12.8 50 0.4 3.5 -65 to 150 150 Unit V V V A A A W W/C V/ns C C
(*)Pulse width limited by safe operating area (1)ISD 3.2A, di/...251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4...
...oise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwav...251 0.270 0.287 0.310 0.342 0.362 ANG deg -20.6 -56.2 -83.8 -116.2 -132.4 -147.3 -166.6 177.0 167.0 ...
Description
Silicon NPN Planar RF Transistor(集电极电0mA,低噪声小信号放大器应用的NPN平面型晶体管) MINILINK UK ; From old datasheet system
to power the next generation of advanced microprocessors. To achieve very low dropout, the internal pass transistor is powered separately fr...251
Load Regulation (%)
0.08 TJ = 120C 0.06 TJ = 20C
1.250
1.249
0.04 TJ = 0C 0.02
...