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![IRH7150 IRH4150 IRH8150 IRH3150 IRH7150-15](Maker_logo/international_rectifier.GIF)
IRF[International Rectifier]
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Part No. |
IRH7150 IRH4150 IRH8150 IRH3150 IRH7150-15
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OCR Text |
...25C, ID = 1.0mA VGS = 12V, ID = 21A VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 34A VDS = 50V VDD = 50V, ID = 34A VGS =12V, RG = 2.35
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Description |
Simple Drive Requirements 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)
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File Size |
272.58K /
12 Page |
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![IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN4150 IRHN8150 JANSG2N7268U JANSR2N7268U](Maker_logo/international_rectifier.GIF)
IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN4150 IRHN8150 JANSG2N7268U JANSR2N7268U
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OCR Text |
...25C, ID = 1.0mA VGS = 12V, ID = 21A VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A VDS= 160V,VGS=0V VDS = 80V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 34A VDS = 50V VDD = 50V, ID = 34A, VGS = 12V, RG =2.35
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Description |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统(SMD - 1
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File Size |
283.27K /
12 Page |
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Infineon
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Part No. |
SPB21N10
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OCR Text |
... mj reverse diode d v /d t i s =21a, v ds =80v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 104 w operating and storage temperature t j , t st g -55... +175 c iec climat... |
Description |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
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File Size |
376.49K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
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OCR Text |
... the data sheet.
Features
* 21A, 400V, rDS(ON) = 0.210 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up t... |
Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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File Size |
76.16K /
8 Page |
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it Online |
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Price and Availability
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