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  -21a Datasheet PDF File

For -21a Found Datasheets File :: 917    Search Time::1.094ms    
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    IRG4PSH71KD

International Rectifier
Part No. IRG4PSH71KD
OCR Text ... s ) i = 84a i = 42a i = 21a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - ( a/ s ) i = 84a i = 42a i = 21a f f f v = 200v t = 125c t = 25c r j j 0 1000 2000 3000 4000 5000 100 1000 f di /dt - ( ...
Description 78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package

File Size 207.27K  /  10 Page

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    IRH7150 IRH4150 IRH8150 IRH3150 IRH7150-15

IRF[International Rectifier]
Part No. IRH7150 IRH4150 IRH8150 IRH3150 IRH7150-15
OCR Text ...25C, ID = 1.0mA VGS = 12V, ID = 21A VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 34A VDS = 50V VDD = 50V, ID = 34A VGS =12V, RG = 2.35 ...
Description Simple Drive Requirements
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)

File Size 272.58K  /  12 Page

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    IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN4150 IRHN8150 JANSG2N7268U JANSR2N7268U

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN4150 IRHN8150 JANSG2N7268U JANSR2N7268U
OCR Text ...25C, ID = 1.0mA VGS = 12V, ID = 21A VGS = 12V, ID = 34A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 21A VDS= 160V,VGS=0V VDS = 80V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 34A VDS = 50V VDD = 50V, ID = 34A, VGS = 12V, RG =2.35 ...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统(SMD - 1

File Size 283.27K  /  12 Page

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    Infineon
Part No. SPB21N10
OCR Text ... mj reverse diode d v /d t i s =21a, v ds =80v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 104 w operating and storage temperature t j , t st g -55... +175 c iec climat...
Description Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL

File Size 376.49K  /  4 Page

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    2SJ667

Sanyo Semicon Device
Part No. 2SJ667
OCR Text ...nce ? yfs ? v ds =--10v, i d =--21a 22 37 s static drain-to-source on-state resistance r ds (on)1 i d =--21a, v gs =--10v 42 56 m w r ds (on)2 i d =--21a, v gs =--4v 52 74 m w marking : j667 continued on next page. sanyo electric co.,ltd. ...
Description General-Purpose Switching Device

File Size 71.55K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
OCR Text ... the data sheet. Features * 21A, 400V, rDS(ON) = 0.210 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up t...
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

File Size 76.16K  /  8 Page

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    SPP21N50C3 SPP21N50C309 SPI21N50C3 SPA21N50C3

Infineon Technologies AG
Part No. SPP21N50C3 SPP21N50C309 SPI21N50C3 SPA21N50C3
OCR Text ...tive tAR limited by Tjmax2) ID=21A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature Reverse diode dv/dt Rev. 3...
Description
File Size 751.04K  /  14 Page

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    APT30F60J

Microsemi Corporation
Part No. APT30F60J
OCR Text ... = 5.44mh, r g = 25 , i as = 21a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de? ned as a...
Description N-Channel FREDFET

File Size 116.59K  /  4 Page

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    IRG4ZH70UD

IRF[International Rectifier]
Part No. IRG4ZH70UD
OCR Text ...00 I F = 84A I F = 42A I F = 21A I F = 84A I F = 42A I F = 21A 200 trr- (nC) Irr- ( A) 10 100 VR = 200 V T J = 12 5C T J = 25 C 0 100 V R = 2 00 V T J = 12 5 C T J = 25 C di f /dt - (A/ s) 1000 1 100 ...
Description 1200V Copack IGBT in a SMD-10 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 231.41K  /  10 Page

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