... History
Revision No. History
0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add t...4V and VIH can overshoot to VCC +0.4v for durations of 20 ns or less.) Apr. 4th 2003 Jun. 30th 2003 ...
Description
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
...ver 10kV Uses small Capacitors: 0.1F Operates to 120kBaud Output Overvoltage Does Not Force Current Back into supplies Rs232 I/O Lines Can B...4V of hysteresis for noise immunity. RX OUT: Receiver Outputs with TTL/CMOs Voltage Levels. A logic ...
Description
5V Low Power Rs232 Transceiver with 2 Receivers Active in shutdown LINE TRANsCEIVER, PDsO18 Hex 2-Input NAND Drivers 20-sOIC 0 to 70 5V的低功耗的Rs232收发器在关机2有源接收 From old datasheet system
...1 grade 6 grade 1 grade 6 Value 0 to 70 -40 to 85 -10 to 80 -50 to 95 -65 to 125 -0.6 to 6 -0.6 to 6 -0.6 to 22 Unit C C C V V V
Note: Ex...4V 0.8V to 2.0V
Figure 4. AC Testing Load Circuit
1.3V
1N914
Note that Output Hi-Z is defi...
Description
NMOs 32K (4K x 8) UV EPROM, 250ns From old datasheet system NMOs 32K 4K x 8 UV EPROM NMOs 32K (4K x 8) UV EPROM(NMOs 32K紫外线擦除EPROM)
...1 grade 6 grade 1 grade 6 Value 0 to 70 -40 to 85 -10 to 80 -50 to 95 -65 to 125 -0.6 to 6.5 -0.6 to 6.5 -0.6 to 13.5 -0.6 to 14 Unit C C C ...4V 0.8V to 2.0V
Figure 4. AC Testing Load Circuit
1.3V
1N914
Note that Output Hi-Z is defi...
Description
NMOs 64K 8K x 8 UV EPROM NMOs4KK的8紫外线存储器 NMOs 256K 32K x 8 UV EPROM NMOs 64K (8K x 8) UV EPROM
...D7 Ta = 25C Conditions Ratings -0.3 to 7.0 -0.3 to VDD+0.3 -0.3 to VDD+0.3 - 5 to 0 0 to 30 1220(P) / 980(FP) -20 to 85 -40 to 125 Unit V V ...4V VOL = 1.0V 5 15 10 25 VDD-0.4 0.4
symbol
Parameter
Conditions VIH = VDD,VIL = GND, fsCL ...
Description
8-BIT I/O EXPANDER for I2C BUs 8-BIT I/O EXPANDER for I C BUs