...junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.24mH Limited by T Jmax , se...02 0.01
J = P DM x Z thJC
0.01 0.00001
0.0001
0.001
0.01
t 1, Rectangular Pulse Du...
Description
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
...unction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG = 25, IAS = 62A. (See Figure 12)
Pulse width 400s; duty cycle 2%....02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Pe...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
...unction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%.
Uses IRF3415 data and test conditions
Starting TJ = 25C, L...02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P ...
Description
Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
...lar Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3515S/L
1 5V
1600
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
VDS
L
D R IV E R
ID 10...
Description
Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)