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  1805 Datasheet PDF File

For 1805 Found Datasheets File :: 739    Search Time::1.688ms    
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    B9202

EPCOS
Part No. B9202
OCR Text ...mum insertion attenuation a max 1805,0 ...1880,0 mhz 1,5 2,2 db 1805,0 ...1880,0 mhz 1) 1) t = +25 2?c 1,4 1,9 db amplitude ripple (p-p) da 1805,0 ...1880,0 mhz 0,7 1,4 db 1805,0 ...1880,0 mhz 1) 0,6 1,1 db input vswr 1805,0 ...188...
Description SAW Components

File Size 112.61K  /  7 Page

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    PH1819-33 PHL819-33

Tyco Electronics
Part No. PH1819-33 PHL819-33
OCR Text 1805 - 1880 mhz phl819-33 features v2.01 i- .744 (18.90)-1 l npn silicon microwave power transistor l common emitter class ai3 operation l internal input and output impedance matching l diffksed emitter balla...
Description WIRELESS POWER TRANSISTOR 33W
Wireless Power Transistor, 33W 1805 - 1880 MHz
Wireless Power Transistor/ 33W 1805 - 1880 MHz

File Size 139.61K  /  2 Page

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    ANADIGICS[ANADIGICS, Inc]
Part No. AWT6201
OCR Text ...to 4.8V, TC = -20 to +85C FIN = 1805 to 1990MHz , VBATT = 3.0 to 4.8V, TC = -20 to +85C FIN = 869 to 960MHz FIN = 1805 to 1990MHz FIN = 869 to 960MHz FIN = 1805 to 1990MHz FIN = 915MHz, POUT = 33.2dBm FIN = 1910MHz, POUT = 30.4dBm 15 15 ...
Description GSM850/GSM900/DCS/PCS Quad Band PowerPlexer with Integrated Power Control

File Size 199.58K  /  12 Page

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    ANADIGICS[ANADIGICS, Inc]
Part No. AWT6202
OCR Text ...o 4.8 V, TC = -20 to +85C FIN = 1805 to 1990 MHz , VBATT = 3.0 to 4.8 V, TC = -20 to +85C FIN = 869 to 960 MHz FIN = 1805 to 1990 MHz FIN = 869 to 960 MHz FIN = 1805 to 1990 MHz GSM850/900 POUT = 33.2 dBm DCS/PCS POUT = 30.3 dBm 4 ADV...
Description GSM850/GSM900/DCS/PCS Quad Band PowerPlexer with Integrated Power Control

File Size 206.56K  /  12 Page

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    Infineon Technologies
Part No. PTFA181001F
OCR Text ...high power rf ldmos fets 100 w, 1805 ? 1880 mhz 2-carrier wcdma drive-up v dd = 28 v, i dq = 750 ma, ? = 1880 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -53 -48 -43 -38 -33 -28 -23 34 36 38 40 42 44 46 average output po...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 416.43K  /  11 Page

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    PHILIPS[Philips Semiconductors]
Part No. KTY82-152 KTY82-151 KTY82-150 KTY82-122 KTY82-121 KTY82-120 KTY82-110 KTY82-1
OCR Text ...2 1209 1299 1392 1490 1591 1696 1805 1915 1970 2023 2124 2211 MAX. 505 530 582 638 698 761 828 898 972 1010 1051 1136 1225 1319 1416 1518 1623 1733 1847 1963 2020 2077 2184 2277 TEMP. ERROR (K) 3.02 2.92 2.74 2.55 2.35 2.14 1.91 1.67 1.41 1...
Description Silicon temperature sensors

File Size 91.13K  /  16 Page

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    KTY82-1 KTY82-110 KTY82-120 KTY82-121 KTY82-122 KTY82-150 KTY82-151 KTY82-152 KTY82-1SERIES_3 KTY82/122

NXP Semiconductors
Philips Semiconductors
Part No. KTY82-1 KTY82-110 KTY82-120 KTY82-121 KTY82-122 KTY82-150 KTY82-151 KTY82-152 KTY82-1SERIES_3 KTY82/122
OCR Text ...2 1209 1299 1392 1490 1591 1696 1805 1915 1970 2023 2124 2211 MAX. 505 530 582 638 698 761 828 898 972 1010 1051 1136 1225 1319 1416 1518 1623 1733 1847 1963 2020 2077 2184 2277 TEMP. ERROR (K) 3.02 2.92 2.74 2.55 2.35 2.14 1.91 1.67 1.41 1...
Description From old datasheet system
KTY82-1 series; Silicon temperature sensors

File Size 70.87K  /  16 Page

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    Freescale (Motorola)
Part No. MRF18090AR3
OCR Text ... = 26 vdc, i dq = 750 ma, f = 1805 ? 1880 mhz) g ps 12.0 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1805 ? 1880 mhz) 47 52 ? % input return loss (1) (v dd = 26 vdc, p out = 90 w cw, i dq = 750 ma,...
Description 1.80–1.88 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET

File Size 228.93K  /  8 Page

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    Freescale (Motorola)
Part No. MRF18060ALSR3 MRF18060ASR3
OCR Text ...rformance, full frequency band (1805 ? 1880 mhz) power gain ? 13 db (typ) @ 60 watts efficiency ? 45% (typ) @ 60 watts ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd pr...
Description 1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs

File Size 247.08K  /  12 Page

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