| |
|
 |
California Eastern Laboratories
|
| Part No. |
NE68818-T1-a NE68819-T1-a NE68833-T1-a
|
| OCR Text |
...n mw 150 125 150 200 200 r th(j-a) thermal resistance (junction to ambient) c/w 833 1000 833 625 625 r th(j-c) thermal resistance(junction ...108.300 1.250 86.900 0.283 18.500 0.757 -56.300 0.428 6.451 1.0 0.726 -125.500 1.098 72.100 0.... |
| Description |
SURFaCE MOUNT NPN SILICON HIGH FREQUENCY TRaNSISTOR
|
| File Size |
352.43K /
20 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
CEL[California Eastern Labs]
|
| Part No. |
NE662M16-T3-a NE662M16
|
| OCR Text |
...PaCKaGE: * Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fT ...108.22 105.79 103.81 102.01 99.85 97.73 95.62 94.20 92.25 90.06 88.26 86.62 84.94 82.99 81.42 79.85 ... |
| Description |
NPN SILICON HIGH FREQUENCY TRaNSISTOR
|
| File Size |
153.11K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
California Eastern Laboratories
|
| Part No. |
NE678M04-T2-a
|
| OCR Text |
... nec's hft3 wafer process. with a transition frequency of 12 ghz, the ne678m04 is usable in applications from 100 mhz to 3 ghz. the ne678m04...108.21 0.05 37.11 0.52 -77.84 0.34 23.61 0.500 0.62 -136.69 10.53 100.63 0.06 33.66 0.46 -86.27 0.42... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRaNSISTOR
|
| File Size |
134.18K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
California Eastern Laboratories
|
| Part No. |
NE662M16-T3-a
|
| OCR Text |
...ackage: ? flat lead style with a height of just 0.50mm features description nec's ne662m16 is fabricated using nec's uhs0 25 ghz f t wafer ...108.22 0.07 37.77 0.55 -52.58 0.49 19.99 1.700 0.60 -113.97 6.57 105.79 0.07 36.69 0.53 -53.71 0.52 ... |
| Description |
NPN SILICON HIGH FREQUENCY TRaNSISTOR
|
| File Size |
175.28K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
CEL[California Eastern Labs]
|
| Part No. |
NE552R479a-T1a-a NE552R479a
|
| OCR Text |
....
Gate
Drain
1.2 MaX.
a
0.40.15 5.7 MaX.
0.20.1
0.8 MaX.
3.60.2
DESCRIPTION
NEC's NE552R479a is an N-Channel silicon p...108.8 -129.7 -142.5 -151.0 -157.3 -162.3 -166.4 -170.0 -173.2 -176.0 -178.7 178.6 176.4 174.2 172.2 ... |
| Description |
NECs 3.0 V, 0.25 W L&S-BaND MEDIUM POWER SILICON LD-MOSFET
|
| File Size |
392.01K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
California Eastern Laboratories
|
| Part No. |
NE552R479a-T1a-a
|
| OCR Text |
... electrical characteristics (t a = 25c) part number ne552r479a package outline 79a symbols characteristi...108.8 9.339 111.6 0.057 23.4 0.569 -132.8 0.05 22.13 0.30 0.775 -129.7 6.708 97.4 0.0... |
| Description |
NECs 3.0 V, 0.25 W L&S-BaND MEDIUM POWER SILICON LD-MOSFET
|
| File Size |
408.19K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC Corp.
|
| Part No. |
UPa827TF-T1-a
|
| OCR Text |
...nt at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 h fe dc current gain 1 at ...108.97 3.18 74.09 0.18 49.45 0.45 -57.74 2.50 0.07 158.31 2.66 60.75 0.21 45.49 0.38 -64.84 3.00 0.1... |
| Description |
NPN SILICON EPITaXIaL TWIN TRaNSISTOR
|
| File Size |
149.44K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
