| |
|
 |
GSI Technology, Inc.
|
| Part No. |
GS864436E-166V GS864418E-150 GS864418E-225 GS864436E-225I
|
| Description |
4M x 18, 2M x 36 72Mb S/dCd sync burst SRaMs 2M X 36 CaCHE SRaM, 7 ns, PBGa165
4M x 18, 2M x 36 72Mb S/dCd sync burst SRaMs 4M X 18 CaCHE SRaM, 7.5 ns, PBGa165
4M x 18, 2M x 36 72Mb S/dCd sync burst SRaMs 4M X 18 CaCHE SRaM, 6.5 ns, PBGa165
4M x 18, 2M x 36 72Mb S/dCd sync burst SRaMs 2M X 36 CaCHE SRaM, 6.5 ns, PBGa165
|
| File Size |
805.64K /
32 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| Part No. |
M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M38232G4-XXXFP M38232G4-XXXHP M38233G4-XXXFP M38233G4-XXXHP M38234G4-XXXFP M38234G4-XXXHP M38235G4-XXXFP M38230G6-XXXFP M38230G6-XXXHP M38231G6-XXXFP M38231G6-XXXHP M38232G6-XXXFP M38232G6-XXXHP M38233G6-XXXFP M38233G6-XXXHP M38234G6-XXXFP M38234G6-XXXHP M38235G6-XXXFP M38235G6-XXXHP M38236G6-XXXHP M38237G6-XXXFP M38237G6-XXXHP M38238G6-XXXFP M38230G7-XXXFP M38230G7-XXXHP M38231G7-XXXFP M38231G7-XXXHP M38232G7-XXXFP M38232G7-XXXHP M38233G7-XXXFP M38233G7-XXXHP M38234G7-XXXFP M38234G7-XXXHP M38235G7-XXXFP M38235G7-XXXHP M38236G7-XXXFP M38236G7-XXXHP M38237G7-XXXFP M38237G7-XXXHP M38238G7-XXXFP M38238G7-XXXHP M38239G7-XXXFP M38239G7-XXXHP M38230G8-XXXFP M38230G8-XXXHP M38231G8-XXXFP M38231G8-XXXHP M38232G8-XXXFP M38232G8-XXXHP M38233G8-XXXFP M38233G8-XXXHP M38234G8-XXXFP M38234G8-XXXHP M38235G8-XXXFP M38235G8-XXXHP M38236G8-XXXFP M38236G8-XXXHP M38237G8-XXXFP M38237G8-XXXHP M38238G8-XXXFP M38238G8-XXXHP M38230Ga-XXXFP M38230Ga-XXXHP M38231Ga-XXXFP M38231Ga-XXXHP M38232Ga-XXXFP M38232Ga-XXXHP M38233Ga-XXXFP M38233Ga-XXXHP M38234Ga-XXXFP M38234Ga-XXXHP M38235Ga-XXXFP M38235Ga-XXXHP M38236Ga-XXXFP M38236Ga-XXXHP M38237Ga-XXXFP M38237Ga-XXXHP
|
| Description |
18-Mbit (512K x 36/1M x 18) Flow-Through SRaM; architecture: Standard sync, Flow-through; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QdR(TM)-II SRaM 4-Word burst architecture; architecture: QdR-II, 4 Word burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit ddR-II SRaM 2-Word burst architecture; architecture: ddR-II CIO, 2 Word burst; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRaM; architecture: Standard sync, Pipeline SCd; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QdR(TM)-II SRaM 2-Word burst architecture; architecture: QdR-II, 2 Word burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRaM; architecture: Standard sync, Flow-through; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QdR(TM)-II SRaM 2-Word burst architecture; architecture: QdR-II, 2 Word burst; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRaM with NoBL(TM) architecture; architecture: NoBL, Flow-through; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QdR(TM)-II SRaM 2-Word burst architecture; architecture: QdR-II, 2 Word burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sync SRaM; architecture: Standard sync, Pipeline SCd; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit ddR-II SRaM 2-Word burst architecture; architecture: ddR-II CIO, 2 Word burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
sync SRaM; architecture: QdR-II, 2 Word burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit ddR-II SRaM 2-Word burst architecture; architecture: ddR-II CIO, 2 Word burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QdR(TM)-II SRaM 4-Word burst architecture; architecture: QdR-II, 4 Word burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined sync SRaM; architecture: Standard sync, Pipeline SCd; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QdR(TM)-II SRaM 4-Word burst architecture (2.5 Cycle Read Latency); architecture: QdR-II , 4 Word burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit ddR-II SRaM 2-Word burst architecture (2.0 Cycle Read Latency); architecture: ddR-II CIO, 2 Word burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sync SRaM; architecture: Standard sync, Pipeline SCd; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit ddR-II SRaM 2-Word burst architecture; architecture: ddR-II CIO, 2 Word burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRaM; architecture: Standard sync, Flow-through; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRaM with NoBL(TM) architecture; architecture: NoBL, Pipeline; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QdR(TM)-II SRaM 4-Word burst architecture; architecture: QdR-II, 4 Word burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QdR(TM)-II SRaM 2-Word burst architecture; architecture: QdR-II, 2 Word burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QdR(TM)-II SRaM 4-Word burst architecture; architecture: QdR-II, 4 Word burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
sync SRaM; architecture: QdR-II, 2 Word burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit ddR-II SRaM 2-Word burst architecture; architecture: ddR-II CIO, 2 Word burst; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit ddR-II SRaM 2-Word burst architecture; architecture: ddR-II CIO, 2 Word burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QdR(TM)-II SRaM 2-Word burst architecture; architecture: QdR-II, 2 Word burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
| File Size |
901.80K /
76 Page |
View
it Online |
Download Datasheet |
| |
|
|
GSI Technology, Inc.
|
| Part No. |
GS881E18BT-300 GS881E32BGT-200I GS881E32BGd-333I GS881E36BT-150I
|
| Description |
512K x 18, 256K x 32, 256K x 36 9Mb sync burst SRaMs 512K X 18 CaCHE SRaM, 5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 9Mb sync burst SRaMs 256K X 32 CaCHE SRaM, 6.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 9Mb sync burst SRaMs 256K X 32 CaCHE SRaM, 4.5 ns, PBGa165
512K x 18, 256K x 32, 256K x 36 9Mb sync burst SRaMs 256K X 36 CaCHE SRaM, 7.5 ns, PQFP100
|
| File Size |
606.15K /
40 Page |
View
it Online |
Download Datasheet |
| |
|
|
GSI Technology, Inc.
|
| Part No. |
GS88136BGd-300I GS88132BT-200
|
| Description |
512K x 18, 256K x 32, 256K x 36 9Mb sync burst SRaMs 256K X 36 CaCHE SRaM, 5 ns, PBGa165
512K x 18, 256K x 32, 256K x 36 9Mb sync burst SRaMs 256K X 32 CaCHE SRaM, 6.5 ns, PQFP100
|
| File Size |
787.47K /
39 Page |
View
it Online |
Download Datasheet |
| |
|
|
ZETTLER electronics GmbH
|
| Part No. |
EdI2CG27264V85d1
|
| Description |
2x64Kx72, 3.3V,8.5ns, sync/sync burst SRaM Module(2x64Kx72, 3.3V.5ns,同步/同步脉冲静态RaM模块) 2x64Kx72.3伏，8.5ns，同同步突发静态存储器模块x64Kx72.3伏，8.5ns，同同步脉冲静态内存模块）
|
| File Size |
2,465.21K /
11 Page |
View
it Online |
Download Datasheet |
| |
|
|
GSI Technology, Inc.
|
| Part No. |
GS832436B-200 GS832436B-225 GS832436B-250 GS832418B-225I GS832418B-150 GS832436B-225I
|
| Description |
2M x 18, 1M x 36, 512K x 72 36Mb S/dCd sync burst SRaMs 2M X 18 CaCHE SRaM, 6 ns, PBGa119
2M x 18, 1M x 36, 512K x 72 36Mb S/dCd sync burst SRaMs 2M X 18 CaCHE SRaM, 10 ns, PBGa119
|
| File Size |
1,146.78K /
46 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
