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    PD57070STR-E PD57070-E PD57070S-E PD57070TR-E

STMicroelectronics
Part No. PD57070STR-E PD57070-E PD57070S-E PD57070TR-E
OCR Text ... plastic package PowerSO-10RF (formed lead) Description The PD57070 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial application...
Description RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

File Size 451.33K  /  22 Page

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    SKY33100-360LF

Skyworks Solutions Inc.
Part No. SKY33100-360LF
OCR Text ...al electrodes. These layers are formed on top of an acoustic mirror comprised of several alternating layers of high and low acoustic impedance materials, the composition and thickness of which are both very tightly controlled. Piezoelectri...
Description BAW Band Pass Filter 2.4 GHz

File Size 291.20K  /  5 Page

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    TISP4700F3LM

Bourns Electronic Solutions
Part No. TISP4700F3LM
OCR Text ...45 LMF Package (LM Pkg. with formed Leads) (Top View) T(A) NC R(B) 1 2 3 MD4XAKC NC - No internal connection on pin 2 Device Symbol T .......................................UL Recognized Component Description These devic...
Description HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

File Size 344.54K  /  11 Page

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    PD55015STR-E PD55025-E PD55025S-E PD55015TR-E

STMicroelectronics
Part No. PD55015STR-E PD55025-E PD55025S-E PD55015TR-E
OCR Text ... plastic package PowerSO-10RF (formed lead) Description The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial application...
Description RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

File Size 456.42K  /  22 Page

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    PD85035STR-E PD85035-E PD85035S-E PD85035TR-E

STMicroelectronics
Part No. PD85035STR-E PD85035-E PD85035S-E PD85035TR-E
OCR Text ...ropean directive PowerSO-10RF (formed lead) Description The PD85035-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applicatio...
Description RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

File Size 348.65K  /  15 Page

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    BAT64-04 BAT64-05 BAT64-06 BAT64

Continental Device India Limited
Part No. BAT64-04 BAT64-05 BAT64-06 BAT64
OCR Text ...64-04 BAT64-05, BAT64-06 SOT-23 formed SMD Package BAT64 3 3 BAT64-04 3 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE Pin Configuration 1 = A N ODE 2 = CATHODE 3 = ANODE/ 1 3 3 2 2 1 3 Pin Configuration 1...
Description SILICON PLANAR SCHOTTKY DIODES

File Size 135.06K  /  4 Page

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    ERD-S2TJ753V ERD25FJT ERD25FJP ERD25FJV ERD25FVJ ERD25FVJT ERD25T ERD25TJB ERD25T0 ERD25TJT ERD25VJ ERD25TJV ERD25VJT ER

Panasonic Semiconductor
Part No. ERD-S2TJ753V ERD25FJT ERD25FJP ERD25FJV ERD25FVJ ERD25FVJT ERD25T ERD25TJB ERD25T0 ERD25TJT ERD25VJ ERD25TJV ERD25VJT ERD51F0103T ERD51FJ103T ERD51T0103P ERD51F0103V ERD51FJ103P ERD51FJ103V ERD51F0103P ERD51TJ103P ERD52TJ103P ERD51TJ103T ERD25TJ103P ERD52TJ103T ERD25TJ103T ERD51TJ103V ERD52TJ103V ERD25TJ103V ERD25V0103 ERD25V0103V ERD-S2TJ561V ERDS1F ERDS1FVJT ERDS1TJT ERDS1TJV ERDS1FJP ERDS1FJT ERDS1FJV ERDS1TJB ERD-S1TJ472V ERD-S2TJ102V ERD-S2TJ222V ERD25F0103P ERD25F0103V ERD25FJ103V ERD25F0103T ERD25FJ103P ERD25FJ103T ERDS2T ERDS2TJV ERDS2FJV ERDS2T0 ERDS2TYJT ERDS2FJT ERDS2TJA ERDS2TJT ERD25T0103 ERD25T0103P ERD25T0103T ERD25T0103V ERDS1VJT ERD51T0103V ERD52T0103V ERD52T0103P ERD51T0103T ERD52T0103T ERD52V0103V ERD52V0103P ERD52V0103T ERD51V0103P ERD51V0103V
OCR Text ...fix for packaging and /or cut & formed leads standard bulk packing standard taped box (26 mm axial or radial) standard taped & box (52 mm axial) lead formed flame retardant special feature and/or cut & formed style (type) t v, fv f standard...
Description Carbon Film Resistors
Carbon Film Re sis tors

File Size 173.40K  /  7 Page

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    HSDL-110098H HSDL-1100

Agilent(Hewlett-Packard)
Part No. HSDL-110098H HSDL-1100
OCR Text ...(0.269 0.006) THE -B- DATUM IS formed BY THE HIGHEST POINT ON THE SURFACE AND THE HIGHEST POINT ON THE CORRESPONDING SURFACE OF THE LEAD ON THE OTHER SIDE OF THE PACKAGE. (12x) 5.0 3.5 (12x) 0.63 0.12 (0.025 0.005) 3.50 0.20 (0.138 ...
Description Infrared Transceiver

File Size 199.10K  /  12 Page

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    TISP4290F3LM-S TISP4125F3LMR-S TISP4125F3LM-S TISP4125F3LMFR TISP4125F3LMR

Bourns Electronic Solutions
Part No. TISP4290F3LM-S TISP4125F3LMR-S TISP4125F3LM-S TISP4125F3LMFR TISP4125F3LMR
OCR Text ... LMF Package (LM Package with formed Leads) (Top View) T(A) NC R(B) 1 2 3 MD4XAKB Rated for International Surge Wave Shapes NC - No internal connection on pin 2 Waveshape 10/160 s 0.5/700 s 10/700 s 10/560 s 10/1000 s S...
Description BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

File Size 375.16K  /  11 Page

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