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MOTOROLA[Motorola, Inc]
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| Part No. |
MGP20N14CL
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| OCR Text |
...M Internally Clamped, N-Channel igbt
This Logic Level Insulated Gate Bipolar Transistor (igbt) features Gate-Emitter ESD protection, Gate-C...mosfet Transistor Device Data
1
MGP20N14CL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherw... |
| Description |
Internally Clamped, N-Channel igbt
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| File Size |
73.79K /
4 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGP21N60E
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| OCR Text |
...ulated Gate Bipolar Transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capabili...mosfet Transistor Device Data
1
MGP21N60E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwi... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
123.84K /
6 Page |
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it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MGW12N120D
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| OCR Text |
...ulated Gate Bipolar Transistor (igbt) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to pr...mosfet Transistor Device Data
1
MGW12N120D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherw... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode 20 A, 1200 V, N-CHANNEL igbt, TO-247AE
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| File Size |
250.62K /
6 Page |
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it Online |
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MOTOROLA INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MGW12N120
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| OCR Text |
...ulated Gate Bipolar Transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capabili...mosfet Transistor Device Data
1
MGW12N120
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwi... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
228.81K /
6 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGY30N60D
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| OCR Text |
...ulated Gate Bipolar Transistor (igbt) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to pr...mosfet Transistor Device Data
1
MGY30N60D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwi... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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| File Size |
254.37K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGY40N60D
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| OCR Text |
...ulated Gate Bipolar Transistor (igbt) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to pr...mosfet Transistor Device Data
1
MGY40N60D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwi... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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| File Size |
246.87K /
6 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MGY40N60
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| OCR Text |
...ulated Gate Bipolar Transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capabili...mosfet Transistor Device Data
1
MGY40N60
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwis... |
| Description |
Insulated Gate Bipolar Transistor
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| File Size |
205.43K /
6 Page |
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it Online |
Download Datasheet |
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SEMIKRON[Semikron International]
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| Part No. |
SKHI61
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| OCR Text |
...mitter voltage sense across the igbt (for 1200V-igbts) Rate of rise and fall of voltage (secondary to primary side) Isolation test voltage i...mosfet Driver
SKHI 61
VCE dv/dt VisolIO Visol12 RGonmin RGoffmin Qout/pulse Top Tstg
Features... |
| Description |
Sixpack igbt and mosfet Driver
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| File Size |
163.67K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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