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  insulated Datasheet PDF File

For insulated Found Datasheets File :: 8873    Search Time::1.062ms    
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    CM1200HB-50H CM1200HB-50H05

Mitsubishi Electric Semiconductor
Part No. CM1200HB-50H CM1200HB-50H05
OCR Text insulated Gate Bipolar Transistor) Modules insulated TYPE CM1200HB-50H q IC................................................................ 1200A q VCES ....................................................... 2500V q insulated Type q ...
Description HIGH POWER SWITCHING USE insulated TYPE

File Size 47.01K  /  4 Page

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    CM450DX-24S1

Mitsubishi Electric Semiconductor
Part No. CM450DX-24S1
OCR Text insulated type collector current i c ............. ? ...... ... .......... . .. .? 4 5 0 a collector - emitter voltage v ces ....... ..... .... . .... .? 1 2 0 0 v maximum junction temperature t j...
Description HIGH POWER SWITCHING USE insulated TYPE

File Size 702.38K  /  10 Page

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    T0605MH T0609MH T0605XH 3473 T0609XH T0605DH T0605NH T0605SH T0609DH T0609NH T0609SH

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. T0605MH T0609MH T0605XH 3473 T0609XH T0605DH T0605NH T0605SH T0609DH T0609NH T0609SH
OCR Text ... C C A2s A/s Unit A A TO220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 T0605xH / T0609xH THERMAL RE...
Description From old datasheet system
SENSITIVE GATE TRIACS

File Size 61.08K  /  5 Page

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    ISL9V3040D3SL-TF3-T ISL9V3040D3SL-TA3-T

Unisonic Technologies
Part No. ISL9V3040D3SL-TF3-T ISL9V3040D3SL-TA3-T
OCR Text insulated gate bipolar transistor www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r219-011.b 300mj, 400v, n-channel ignition igbt ? description the utc isl9v3040d3s i...
Description 300mJ, 400V, N-CHANNEL IGNITION IGBT

File Size 169.16K  /  4 Page

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    CM800HB-50H

Mitsubishi Electric Semiconductor
Part No. CM800HB-50H
OCR Text insulated Gate Bipolar Transistor) Modules insulated TYPE CM800HB-50H q IC...................................................................800A q VCES ....................................................... 2500V q insulated Type q ...
Description HIGH POWER SWITCHING USE insulated TYPE

File Size 43.73K  /  4 Page

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    PM100RLA060 PM100RLA06005

Mitsubishi Electric Semiconductor
Part No. PM100RLA060 PM100RLA06005
OCR Text insulated PACKAGE PM100RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.5V @Tj=125C b) I adopt the over-temperature conservation b...
Description FLAT-BASE TYPE insulated PACKAGE

File Size 124.33K  /  9 Page

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    PM300RLA060

Mitsubishi Electric Semiconductor
Part No. PM300RLA060
OCR Text insulated PACKAGE PM300RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.5V @Tj=125C b) I adopt the over-temperature conservation by ...
Description INTELLIGENT POWER MODULES FLAT-BASE TYPE insulated PACKAGE

File Size 124.56K  /  9 Page

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    PM50B5LA060 PM50B5LA06011

Mitsubishi Electric Semiconductor
Part No. PM50B5LA060 PM50B5LA06011
OCR Text insulated PACKAGE PM50B5LA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.55V @Tj=125C b) Over-temperature protection by detecting...
Description FLAT-BASE TYPE insulated PACKAGE

File Size 168.72K  /  10 Page

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    PM50B6LA060

Mitsubishi Electric Semiconductor
Part No. PM50B6LA060
OCR Text insulated PACKAGE PM50B6LA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.55V @Tj=125C b) Over-temperature protection by detecting...
Description FLAT-BASE TYPE insulated PACKAGE

File Size 172.37K  /  10 Page

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    PM75B5LA060 PM75B5LA06011

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. PM75B5LA060 PM75B5LA06011
OCR Text insulated PACKAGE PM75B5LA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.55V @Tj=125C b) Over-temperature protection by detecting...
Description FLAT-BASE TYPE insulated PACKAGE

File Size 170.25K  /  10 Page

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For insulated Found Datasheets File :: 8873    Search Time::1.062ms    
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