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  methodology Datasheet PDF File

For methodology Found Datasheets File :: 1448    Search Time::2.344ms    
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    MRF5S19060NBR1 MRF5S19060NR1

Freescale Semiconductor, Inc
Part No. MRF5S19060NBR1 MRF5S19060NR1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S19060NR1 MRF5S1...
Description RF Power Field Effect Transistors

File Size 485.83K  /  16 Page

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    MRF6VP21KHR6 MRF6VP21KHR610

Freescale Semiconductor, Inc
Part No. MRF6VP21KHR6 MRF6VP21KHR610
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (c) Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. MRF6VP21KHR6 ...
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 700.00K  /  11 Page

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    MW6IC2420NBR1

Freescale Semiconductor, Inc
Part No. MW6IC2420NBR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Lev...
Description RF LDMOS Integrated Power Amplifier

File Size 479.77K  /  12 Page

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    ATC600B121BT250XT ATC600B200BT250XT ATC600B270BT250XT ATC600B3R3BT250XT ATC600B470BT250XT ATC600B8R2BT250XT CRCW12061001

Freescale Semiconductor, Inc
Part No. ATC600B121BT250XT ATC600B200BT250XT ATC600B270BT250XT ATC600B3R3BT250XT ATC600B470BT250XT ATC600B8R2BT250XT CRCW12061001FKTA CRCW12061002FKTA CRCW1206100RFKTA 1812SMS-27NL MRF5S4125NBR1 MRF5S4125NR1 GRM55DR61H106KA88L T491X226K035A5
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007. All rights reserved. MRF5S4125NR1 MRF5S41...
Description N-Channel Enhancement-Mode Lateral MOSFETs

File Size 520.49K  /  15 Page

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    MMZ09312B MMZ09312B12

Freescale Semiconductor, Inc
Part No. MMZ09312B MMZ09312B12
OCR Text ... to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: mmz09312b rev. 1, 2/2012 400--...
Description Heterojunction Bipolar Transistor

File Size 1,172.51K  /  20 Page

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    MRFE6S9060NR1

Freescale Semiconductor, Inc
Part No. MRFE6S9060NR1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007. All rights reserved. MRFE6S9060NR1 1 R...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 570.83K  /  15 Page

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    MRF6VP11KHR6

Freescale Semiconductor, Inc
Part No. MRF6VP11KHR6
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MRF6VP11KHR6 1 RF D...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 437.18K  /  11 Page

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    MRF6S18100NR1 MRF6S18100NBR1

Freescale Semiconductor, Inc
Part No. MRF6S18100NR1 MRF6S18100NBR1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S18100NR1 MRF6S1...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 693.63K  /  20 Page

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    MRF6S9045 MRF6S9045NR1 MRF6S9045MBR1 MRF6S9045MR1 MRF6S9045NBR1

Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6S9045 MRF6S9045NR1 MRF6S9045MBR1 MRF6S9045MR1 MRF6S9045NBR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Leve...
Description RF Power Field Effect Transistors

File Size 524.99K  /  16 Page

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    MMH3111NT1

Freescale Semiconductor, Inc
Part No. MMH3111NT1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007. All rights reserved. MMH3111NT1 1 RF D...
Description Heterostructure Field Effect Transistor

File Size 292.67K  /  16 Page

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For methodology Found Datasheets File :: 1448    Search Time::2.344ms    
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