TMOS E-FET Power Field Effect Transistor n-channel Enhancement-Mode silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
100V4A TMOS Power Field Effect Transistor (n-channel Enhancement Mode silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor n-channel Enhancement-Mode silicon Gate
silicon N Channel MOS FET silicon n-channel Junction FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR|JFET|n-channel|8MA I(DSS)|TO-92 TRANSISTOR|JFET|n-channel|20MA I(DSS)|TO-92 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我(直)|2