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For tabless Found Datasheets File :: 144    Search Time::8.515ms    
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    IRHYB67134CM IRHYB67134CM-15

International Rectifier
Part No. IRHYB67134CM IRHYB67134CM-15
OCR Text ...eters. low-ohmic to-257aa tabless radiation hardened irhyb67134cm power mosfet 150v, n-channel thru-hole (low-ohmic to-257aa) technology product summary ...
Description Simple Drive Requirements

File Size 186.53K  /  9 Page

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    IRHYB67230CM IRHYB67230CM-15

International Rectifier
Part No. IRHYB67230CM IRHYB67230CM-15
OCR Text ...eters. low-ohmic to-257aa tabless radiation hardened irhyb67230cm power mosfet 200v, n-channel thru-hole (low-ohmic to-257aa) technology product summary ...
Description Simple Drive Requirements

File Size 188.80K  /  9 Page

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    IRHMK53160

International Rectifier
Part No. IRHMK53160
OCR Text ...t page pre-irradiation to-254aa tabless low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT

File Size 172.87K  /  8 Page

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    STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP

STMicroelectronics
Part No. STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
OCR Text ... TO-220FP 12 3 IPAK (tabless TO-220) DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an o...
Description N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET

File Size 531.16K  /  12 Page

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    SGS Thomson Microelectronics
Part No. STB7NC70Z-1
OCR Text ...220 1 2 3 to-220fp 1 2 3 i2pak (tabless to-220) stp7nc70z/fp/stp7nc70z-1 2/11 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 / i2pak to-220fp rthj-cas...
Description N-CHANNEL 700V 1.1OHM 6A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET

File Size 120.80K  /  11 Page

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    STB20NM50FD-1 STP20NM50FD

STMICROELECTRONICS[STMicroelectronics]
Part No. STB20NM50FD-1 STP20NM50FD
OCR Text ... 12 3 TO-220 I2PAK (tabless TO-220) DESCRIPTION The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge top...
Description N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh⑩ Power MOSFET with FAST DIODE
N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh Power MOSFET with FAST DIODE

File Size 275.38K  /  9 Page

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    IRHYB67230CM

International Rectifier
Part No. IRHYB67230CM
OCR Text ...eters. low-ohmic to-257aa tabless radiation hardened irhyb67230cmpower mosfet 200v, n-channel thru-hole (low-ohmic to-257aa) technology product summary ...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package

File Size 189.27K  /  9 Page

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    IRHYB63134CM

International Rectifier
Part No. IRHYB63134CM
OCR Text ...eters. low-ohmic to-257aa tabless radiation hardened irhyb67134cmpower mosfet 150v, n-channel thru-hole (low-ohmic to-257aa) technology product summary ...
Description 150V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package

File Size 189.39K  /  9 Page

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    STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NC90Z STP5NC90ZFP STB5NC90Z STB5NC90Z-1
OCR Text ...s WELDING EQUIPMENT s IPAK (tabless TO-220) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Volta...
Description N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET

File Size 514.47K  /  13 Page

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For tabless Found Datasheets File :: 144    Search Time::8.515ms    
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