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  -160v Datasheet PDF File

For -160v Found Datasheets File :: 2301    Search Time::1.281ms    
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    AP09N20BGS-HF AP09N20BGS-HF14 AP09N20BGS-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N20BGS-HF AP09N20BGS-HF14 AP09N20BGS-HF-14
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 21 33.6 nc q gs gate-source charge v ds =160v - 2 - nc q gd gate-drain ("miller") charge...
Description Simple Drive Requirement Lower Gate Charge

File Size 56.18K  /  4 Page

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    Advanced Power Electronics
Part No. AP09N20BGS-HF
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 21 33.6 nc q gs gate-source charge v ds =160v - 2 - nc q gd gate-drain ("miller") charge...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 83.45K  /  4 Page

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    BUZ901X4S BUZ900X4S

Magnatec
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. BUZ901X4S BUZ900X4S
OCR Text ...ED AND DIFFUSED * HIGH VOLTAGE (160V & 200V) * HIGH ENERGY RATING SOT227 Pin 1 - Drain Pin 2 - Source Pin 3 - Gate Pin 4 - Drain * ENHANCEMENT MODE * INTEGRAL PROTECTION DIODE * P-CHANNEL ALSO AVAILABLE ABSOLUTE MAXIMUM RATINGS (T...
Description N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路)) N沟道功率MOSFET为音频应用(不适用马鞍山沟道功率型场效应管(用于音频电路)
NEW PRODUCT UNDER DEVELOPMENT 新产品开发中

File Size 33.10K  /  2 Page

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    IRF[International Rectifier]
Part No. HFB08PB120 HFA08PB120
OCR Text ... 20 IF = 8 A IF = 4 A V R= 160V T J = 125C T J = 25C 16 IF = 8 A IF = 4 A 100 80 60 Irr ( A) 12 8 4 40 20 100 di F /dt (A/s ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt VR = 160V TJ = 125C TJ = 25C 1000 0 ...
Description 1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode

File Size 173.16K  /  7 Page

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    IRF[International Rectifier]
Part No. HFA16PA120C
OCR Text ... 20 IF = 8 A IF = 4 A V R= 160V T J = 125C T J = 25C 16 IF = 8 A IF = 4 A 80 60 Irr ( A) 100 12 8 4 40 20 100 di F /dt (A/s ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt VR = 160V TJ = 125C TJ = 25C 1000 ...
Description 1200V 16A HEXFRED Common Cathode Diode in a TO-247AC package
HEXFRED Ultrafast, Soft Recovery Diode
HEXFRED Ultrafast/ Soft Recovery Diode

File Size 123.69K  /  7 Page

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    ZETEX[Zetex Semiconductors]
Part No. FXT601B
OCR Text ...C=10mA, IB=0* IE=100A, IC=0 VCB=160V VCB=160V,T amb =100C VEB=8V, IC=0 VCES=160V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=100mA, VCE=10V f=20MHz Emitter Cut-Of...
Description NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

File Size 28.46K  /  1 Page

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    IRFR9N20D IRFU9N20D

IRF[International Rectifier]
Part No. IRFR9N20D IRFU9N20D
OCR Text ...V, VGS = 0V A --- --- 250 VDS = 160V, VGS = 0V, T J = 150C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)
N-Channel SMPS MOSFET,for High Frequency DC-DC Converters(应用于高DC-DC转换器的N沟道开关模式电源MOS场效应管)

File Size 122.91K  /  10 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRS9230R FRS9230D FRS9230H
OCR Text ...20V VDS = -200V, VGS = 0 VDS = -160v, VGS = 0 VDS = -160v, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 4A VGS = -10V, ID = 2A VDD = -100V, ID = 4A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN -200 -2.0 1 15...
Description 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs 4 A, 200 V, 1.32 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs

File Size 48.90K  /  6 Page

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    AP09N20BGP-HF AP09N20BGP-HF14 AP09N20BGP-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N20BGP-HF AP09N20BGP-HF14 AP09N20BGP-HF-14
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 21 33.6 nc q gs gate-source charge v ds =160v - 2 - nc q gd gate-drain ("miller") char...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 55.06K  /  4 Page

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    SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STV7801SP STV7801 STV7801S
OCR Text ...F 3 12 Out 2 CBoot 14 +90V 100F/160V 1 15 Vpp STV7801 1H Vssp 11 to Vpp pins of data driver ICs (eg pins 1, 2, 42, 66, 107,108 of STV7610A) 10K LH-Tr 100pF 4 5 47F/160V 1F/160V 10 Vdd DM-HL DM-LH 6 9 Vsslog 7 8 P...
Description PLASMA DATA POWER SWITCH

File Size 194.71K  /  18 Page

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For -160v Found Datasheets File :: 2301    Search Time::1.281ms    
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