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Cypress Semiconductor Corp.
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| Part No. |
CY7C1380D
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| OCR Text |
... unit maximum access time 2.6 3.0 3.4 ns maximum operating current 350 300 275 ma maximum cmos standby current 70 70 70 ma notes: 1. for be...119 bga is offered only in 1 chip enable.
cy7c1380d cy7c1382d document #: 38-05543 rev. *d page ... |
| Description |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM(18-Mb (512K x 36/1M x 18)管道式SRAM) 18兆位（为512k × 36/1M × 18）流水线的SRAM18 - MB的（12k × 36/1M × 18）管道式的SRAM
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| File Size |
557.50K /
30 Page |
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CREE
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| Part No. |
CR14
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| OCR Text |
... s step dimming to 50% 10v 0 -10v dimming to 5% les lutron ecosystem f enabled to 5% hd 6 high defnition color - cri 80+ ...119 119 119 119 1 110 106 102 73 2 101 93 87 82 3 92 82 75 69 4 85 74 65 59 5 78 66 57 51 6 72 60 51... |
| Description |
LED Trofer
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| File Size |
288.34K /
2 Page |
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IDT
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| Part No. |
IDT71V3579S75BG
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| OCR Text |
...pitch ball grid array (fbga). a 0 -a 17 address inputs input synchronous ce chip enable input synchronous cs 0 , cs 1 chip selects input sy...119 bga capacitance (t a = +25 c, f = 1.0mhz) symbol parameter (1) conditions max. unit c in input... |
| Description |
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O
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| File Size |
233.94K /
22 Page |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1380F-200BGXI CY7C1380F-167BGXI CY7C1380D-250BZXI CY7C1380F-250BGC
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| OCR Text |
... unit maximum access time 2.6 3.0 3.4 ns maximum operating current 350 300 275 ma maximum cmos standby current 70 70 70 ma notes 1. for best...119 bga is offered only in 1 chip enable. [+] feedback
cy7c1380d, cy7c1382d cy7c1380f, cy7c1382f ... |
| Description |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119
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| File Size |
854.97K /
34 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1380DV25-250BZXI CY7C1380DV25-200BZC CY7C1380DV25-200AXI
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| OCR Text |
... unit maximum access time 2.6 3.0 3.4 ns maximum operating current 350 300 275 ma maximum cmos standby current 70 70 70 ma notes: 1. for be...119 bga is offered only in 1 chip enable [+] feedback
cy7c1380dv25, cy7c1380fv25 cy7c1382dv25, ... |
| Description |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
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| File Size |
930.63K /
29 Page |
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Integrated Device Technology, Inc.
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| Part No. |
IDT71V802S133PFI IDT71V802S133BQI IDT71V67602S133PFI IDT71V802S150PFI IDT71V67602S150PFI
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| OCR Text |
0 -a 18 address inputs input synchronous ce chip enable input synchronous cs 0 , cs 1 chip selects input synchronous oe output enable input...119 ball grid array (bga) and 165 fine pitch ball grid array. pin description summary note: 1. bw 3 ... |
| Description |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM2.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 4.2 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 3.8 ns, PQFP100
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| File Size |
980.97K /
22 Page |
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Integrated Device Technology, Inc.
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| Part No. |
IDT71V67802150BQI IDT71V67802150BG IDT71V67602150PF IDT71V67602150BQ IDT71V67602166PFI IDT71V67802133BG IDT71V67802133BQ
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| OCR Text |
0 -a 18 address inputs input synchronous ce chip enable input synchronous cs 0 , cs 1 chip selects input synchronous oe output enable input...119 ball grid array (bga) and 165 fine pitch ball grid array. pin description summary note: 1. bw 3 ... |
| Description |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
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| File Size |
517.49K /
23 Page |
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it Online |
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